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IRF6802SDPBF

更新时间： 2024-11-02 12:03:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 230K
描述
RoHs Compliant Containing No Lead and Bromide

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中文翻译

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IRF6802SDPBF 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：compliant风险等级：5.21
最大漏极电流 (Abs) (ID)：57 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：21 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

IRF6802SDPBF 数据手册

 浏览型号IRF6802SDPBF的Datasheet PDF文件第2页浏览型号IRF6802SDPBF的Datasheet PDF文件第3页浏览型号IRF6802SDPBF的Datasheet PDF文件第4页浏览型号IRF6802SDPBF的Datasheet PDF文件第5页浏览型号IRF6802SDPBF的Datasheet PDF文件第6页浏览型号IRF6802SDPBF的Datasheet PDF文件第7页 
PD - 97769  
IRF6802SDPbF  
IRF6802SDTRPbF  
DirectFET®plus Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±16V max  
3.2m@ 10V 4.5m@ 4.5V  
l Dual Sided Cooling Compatible   
l Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
8.8nC 3.1nC 1.1nC  
22nC  
13nC  
1.6V  
l Optimized for Control FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
G
G
D
D
S
S
DirectFET®plusISOMETRIC  
SA  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
SA  
MQ  
MX  
MT  
MP  
MB  
Description  
The IRF6802SDTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to  
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET® package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®  
package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6802SDTRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6802SDTRPbF has been optimized for the control FET socket of synchronous buck  
operating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±16  
16  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
13  
@ TA = 70°C  
@ TC = 25°C  
A
57  
130  
66  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13  
10  
8
14.0  
12.0  
10.0  
8.0  
I = 13A  
I
= 16A  
D
V
V
V
= 20V  
= 13V  
= 6.0V  
D
DS  
DS  
DS  
6
T
= 125°C  
= 25°C  
J
6.0  
4
4.0  
2
T
2.0  
J
0
0.0  
2
4
6
8
10  
12  
14  
16  
0
5
10  
15  
20  
25  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes:  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.78mH, RG = 50, IAS = 13A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
03/21/12  
1234567...9

中文翻译

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