是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-XBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.21 |
雪崩能效等级(Eas): | 220 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (Abs) (ID): | 197 A | 最大漏极电流 (ID): | 37 A |
最大漏源导通电阻: | 0.0013 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 78 W |
最大脉冲漏极电流 (IDM): | 300 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN SILVER COPPER | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF6798MTRPBF | INFINEON |
功能相似 |
HEXFET Power MOSFET plus Schottky Diode |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6798MTR1PBF | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF6798MTRPBF | INFINEON |
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HEXFET Power MOSFET plus Schottky Diode | |
IRF6802SDPBF | INFINEON |
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RoHs Compliant Containing No Lead and Bromide | |
IRF6802SDTR1PBF | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF6802SDTRPBF | INFINEON |
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RoHs Compliant Containing No Lead and Bromide | |
IRF6810SPBF | INFINEON |
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DirectFET®Power MOSFET | |
IRF6810SPBF_15 | INFINEON |
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RoHS Compliant and Halogen Free | |
IRF6810STR1PBF | INFINEON |
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RoHS Compliant and Halogen Free | |
IRF6810STRPBF | INFINEON |
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RoHS Compliant and Halogen Free | |
IRF6811SPBF | INFINEON |
获取价格 |
RoHS Compliant and Halogen Free |