是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-XBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 15 weeks |
风险等级: | 5.32 | 其他特性: | LOW CONDUCTION LOSS |
雪崩能效等级(Eas): | 260 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 25 V |
最大漏极电流 (Abs) (ID): | 210 A | 最大漏极电流 (ID): | 36 A |
最大漏源导通电阻: | 0.0014 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-XBCC-N3 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 89 W | 最大脉冲漏极电流 (IDM): | 300 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRF6797MTR1PBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF6798MPBF | INFINEON |
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HEXFET Power MOSFET plus Schottky Diode | |
IRF6798MTR1PBF | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF6798MTRPBF | INFINEON |
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HEXFET Power MOSFET plus Schottky Diode | |
IRF6802SDPBF | INFINEON |
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RoHs Compliant Containing No Lead and Bromide | |
IRF6802SDTR1PBF | INFINEON |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF6802SDTRPBF | INFINEON |
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RoHs Compliant Containing No Lead and Bromide | |
IRF6810SPBF | INFINEON |
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DirectFET®Power MOSFET | |
IRF6810SPBF_15 | INFINEON |
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RoHS Compliant and Halogen Free | |
IRF6810STR1PBF | INFINEON |
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RoHS Compliant and Halogen Free | |
IRF6810STRPBF | INFINEON |
获取价格 |
RoHS Compliant and Halogen Free |