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IRF6795MPBF_10

更新时间： 2024-09-16 05:39:27
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英飞凌 - INFINEON 肖特基二极管
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9页 255K
描述
HEXFET Power MOSFET plus Schottky Diode

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IRF6795MPBF_10 数据手册

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PD - 97321C  
IRF6795MPbF  
IRF6795MTRPbF  
HEXFET® Power MOSFET plus Schottky Diode ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant Containing No Lead and Halogen Free   
l Integrated Monolithic Schottky Diode  
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±20V max  
1.4mΩ@ 10V 2.4mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
35nC  
10nC  
4.8nC  
34nC  
27nC  
1.8V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF6795MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6795MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to  
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further  
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC  
converters that power high current loads such as the latest generation of microprocessors. The IRF6795MPbF has been optimized for  
parameters that are critical in synchronous buck converter’s Sync FET sockets.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
±20  
32  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
25  
A
@ TA = 70°C  
@ TC = 25°C  
160  
250  
190  
25  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
14.0  
12.0  
10.0  
8.0  
6
5
4
3
2
1
I = 25A  
I
= 32A  
D
D
V
V
= 20V  
DS  
DS  
= 13V  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
J
0.0  
0
2
4
6
8
10 12 14 16 18 20  
0
10 20 30 40 50 60 70 80 90  
Total Gate Charge (nC)  
Q
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.60mH, RG = 25Ω, IAS = 25A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
02/10/2010  
1234567...9

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