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IRF6723M2DTRPBF

更新时间： 2024-09-16 12:30:23
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英飞凌 - INFINEON 转换器
页数 文件大小 规格书
10页 271K
描述
Dual Common Drain Control MOSFETs for Multiphase DC-DC Converters

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IRF6723M2DTRPBF 数据手册

 浏览型号IRF6723M2DTRPBF的Datasheet PDF文件第2页浏览型号IRF6723M2DTRPBF的Datasheet PDF文件第3页浏览型号IRF6723M2DTRPBF的Datasheet PDF文件第4页浏览型号IRF6723M2DTRPBF的Datasheet PDF文件第5页浏览型号IRF6723M2DTRPBF的Datasheet PDF文件第6页浏览型号IRF6723M2DTRPBF的Datasheet PDF文件第7页 
PD - 97441  
IRF6723M2DTRPbF  
IRF6723M2DTR1PbF  
Applications  
l Dual Common Drain Control MOSFETs for  
Multiphase DC-DC Converters  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
Features  
l Replaces Two Discrete MOSFETs  
l Optimized for High Frequency Switching  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Ultra Low Package Inductance  
l Compatible with existing Surface Mount  
Techniques  
VDSS  
30V max ±20V max  
VGS  
RDS(on)  
RDS(on)  
5.2mΩ@ 10V 8.6mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
9.4nC 3.3nC 1.2nC  
17nC  
6.3nC  
1.8V  
l RoHS Compliant and Halogen Free  
l 100% Rg tested  
G1  
S1  
G2  
S2  
DirectFET™ ISOMETRIC  
Applicable DirectFET Outline and Substrate Outline   
S1  
S2  
SB  
M2  
M4  
MA  
L4  
L6  
L8  
Description  
The IRF6723M2DPbF combines two MOSFET switches optimized for high side applications into a single medium can DirectFET package.  
The switches have low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching  
losses. The reduced losses make this product ideal for high efficiency multiphase DC-DC converters that power the latest generation of  
processors operating at higher frequencies.  
The IRF6723M2DPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve the highest power density for two MOSFETs in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET  
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or  
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The  
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by  
80%.  
Absolute Maximum Ratings (each die operating consecutively)  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
15  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
13  
@ TA = 70°C  
@ TC = 25°C  
A
47  
130  
71  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
12  
25  
20  
15  
10  
5
14.0  
12.0  
10.0  
8.0  
I
= 15A  
I = 12A  
D
D
V
= 24V  
= 15V  
DS  
V
DS  
T
= 125°C  
J
6.0  
4.0  
2.0  
T
= 25°C  
J
0
0.0  
2
4
6
8
10 12 14 16 18 20  
0
5
10  
15  
20  
25  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.99mH, RG = 25Ω, IAS = 12A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
12/16/09  
1234567...10

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