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IRF6722MTR1PBF PDF预览

IRF6722MTR1PBF

更新时间： 2024-11-02 21:00:31
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
9页 259K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6722MTR1PBF 数据手册

 浏览型号IRF6722MTR1PBF的Datasheet PDF文件第2页浏览型号IRF6722MTR1PBF的Datasheet PDF文件第3页浏览型号IRF6722MTR1PBF的Datasheet PDF文件第4页浏览型号IRF6722MTR1PBF的Datasheet PDF文件第5页浏览型号IRF6722MTR1PBF的Datasheet PDF文件第6页浏览型号IRF6722MTR1PBF的Datasheet PDF文件第7页 
PD - 96136  
IRF6722MPbF  
IRF6722MTRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant Containing No Lead and Bromide   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
4.7mΩ@ 10V 8.0mΩ@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET application  
l Low Conduction and Switching Losses  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
11nC  
4.3nC 1.2nC  
26nC  
11nC  
1.8V  
DirectFET™ ISOMETRIC  
MP  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MP  
Description  
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6722MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6722MPbF has been optimized for parameters that are critical in synchronous buck  
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
13  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
11  
@ TA = 70°C  
@ TC = 25°C  
A
56  
110  
82  
DM  
EAS  
IAS  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
11  
20  
15  
10  
5
14.0  
12.0  
10.0  
8.0  
I
= 13A  
I = 11A  
D
D
V
V
= 24V  
DS  
DS  
= 15V  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
J
0
0.0  
0
2
4
6
8
10 12 14 16 18 20  
0
4
8
12  
16  
20  
24  
28  
Q , Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 1.45mH, RG = 25Ω, IAS = 11A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
11/12/07  
1234567...9

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