Datasheet > IRF6718L2PBF

IRF6718L2PBF

更新时间： 2024-11-03 01:20:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	236K
描述
Ultra Low Package Inductance

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中文翻译

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IRF6718L2PBF 数据手册

PD - 97395E

IRF6718L2TRPbF

IRF6718L2TR1PbF

DirectFET^®Power MOSFET

l RoHS Compliant Containing No Lead and Bromide

l Dual Sided Cooling Compatible

Typical values (unless otherwise specified)

V_DSS

V_GS

R_DS(on)

l Ultra Low Package Inductance

25V max ±20V max

0.50mΩ@10V 1.0mΩ@4.5V

l Very Low R_DS(ON)for Reduced Conduction Losses

l Optimized for Active O-Ring / Efuse Applications

l Compatible with existing Surface Mount Techniques

Q_{g tot}Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

64nC

20nC

9.4nC

67nC

50nC

1.9V

DirectFET® ISOMETRIC

Applicable DirectFET Outline and Substrate Outline

Description

The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^®packaging to achieve

the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing layout

geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when

application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling

to maximize thermal transfer in power systems.

The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The

IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

±20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C= 25°C

270

490

530

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

14.0

12.0

10.0

8.0

= 61A

I = 49A

= 20V

= 13V

6.0

= 125°C

4.0

2.0

= 25°C

0.0

20 40 60 80 100 120 140 160 180

Total Gate Charge (nC)

Gate -to -Source Voltage (V)

GS,

Fig 1. Typical On-Resistance vs. Gate Voltage

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.44mH, R_G= 25Ω, I_AS= 49A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

www.irf.com

07/27/11

12 3 4 5 6 7...10

中文翻译

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与IRF6718L2PBF相关器件

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