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IRF6717M

更新时间： 2024-11-03 11:13:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 223K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. 

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IRF6717M 数据手册

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PD - 97345C  
IRF6717MPbF  
IRF6717MTRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHs Compliant and Halgen Free   
l Low Profile (<0.7 mm)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
25V max ±20V max  
0.95m@ 10V 1.6m@ 4.5V  
l Dual Sided Cooling Compatible   
l Ultra Low Package Inductance  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Sync. FET socket of Sync. Buck Converter  
l Low Conduction and Switching Losses  
46nC  
14nC  
6.6nC  
31nC  
35nC  
1.8V  
l Compatible with existing Surface Mount Techniques   
l100% Rg tested  
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MT  
MP  
MX  
Description  
The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6717MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and  
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6717MPbF has been optimized for parameters that are critical in synchronous buck  
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPbF offers particularly low Rds(on) and high Cdv/dt  
immunity for synchronous FET applications.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
38  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
30  
A
@ TA = 70°C  
@ TC = 25°C  
220  
300  
290  
30  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
6
5
4
3
2
1
0
14.0  
12.0  
10.0  
8.0  
I
= 30A  
I = 30A  
D
D
V
= 20V  
= 13V  
DS  
V
DS  
6.0  
T
= 125°C  
J
4.0  
2.0  
T = 25°C  
J
0.0  
2
4
6
8
10 12 14 16 18 20  
0
20  
40  
60  
80  
100  
120  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.64mH, RG = 25, IAS = 30A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
06/01/12  
1234567...10

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