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IRF6709S2TR1PBF

更新时间： 2024-11-01 20:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 254K
描述
Power Field-Effect Transistor, 12A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-2

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IRF6709S2TR1PBF 数据手册

 浏览型号IRF6709S2TR1PBF的Datasheet PDF文件第2页浏览型号IRF6709S2TR1PBF的Datasheet PDF文件第3页浏览型号IRF6709S2TR1PBF的Datasheet PDF文件第4页浏览型号IRF6709S2TR1PBF的Datasheet PDF文件第5页浏览型号IRF6709S2TR1PBF的Datasheet PDF文件第6页浏览型号IRF6709S2TR1PBF的Datasheet PDF文件第7页 
PD - 97328A  
IRF6709S2TRPbF  
IRF6709S2TR1PbF  
DirectFET™ Power MOSFET ‚  
l RoHS Compliant and Halogen Free   
l Low Profile (<0.7 mm)  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Dual Sided Cooling Compatible   
25V max ±20V max  
5.9mΩ@10V 10.1mΩ@4.5V  
l Ultra Low Package Inductance  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
8.1nC 2.8nC 1.1nC 9.3nC 4.6nC  
1.8V  
DirectFET™ ISOMETRIC  
S1  
Applicable DirectFET Outline and Substrate Outline   
S2  
SB  
M2  
M4  
L4  
L6  
L8  
S1  
Description  
The IRF6709S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6709S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The  
reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at  
higher frequencies. The IRF6709S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus  
converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
±20  
12  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
9.7  
39  
@ TA = 70°C  
@ TC = 25°C  
A
100  
51  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
30  
20  
10  
0
14.0  
12.0  
10.0  
8.0  
I = 10A  
I
= 12A  
D
D
V
= 20V  
= 13V  
DS  
V
DS  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
J
0.0  
0
2
4
6
8
10 12 14 16 18 20  
0
2
4
6
8
10 12 14 16 18 20  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 1.02mH, RG = 25Ω, IAS = 10A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
04/07/09  
1234567...10

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