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IRF6710S2PBF

更新时间： 2024-11-02 01:20:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 307K
描述
Ultra Low Package Inductance

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IRF6710S2PBF 数据手册

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PD - 97124D  
IRF6710S2TRPbF  
IRF6710S2TR1PbF  
DirectFET™ Power MOSFET ‚  
l RoHS Compliant Containing No Lead and Halogen Free   
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible   
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Ultra Low Package Inductance  
25V max ±20V max  
4.5mΩ@ 10V 9.0mΩ@ 4.5V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
8.8nC  
3.0nC  
1.3nC  
8.0nC 4.4nC  
1.8V  
DirectFET™ ISOMETRIC  
S1  
Applicable DirectFET Outline and Substrate Outline   
S2  
SB  
M2  
M4  
L4  
L6  
L8  
S1  
Description  
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck  
operating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Drain-to-Source Voltage  
Units  
V
VDS  
±20  
12  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
10  
A
@ TA = 70°C  
@ TC = 25°C  
37  
100  
24  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
20  
15  
10  
5
12  
10  
8
I = 10A  
D
V
= 20V  
I
= 12A  
D
DS  
VDS= 13V  
6
T
T
= 125°C  
= 25°C  
J
4
2
J
0
0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0  
, Gate-to-Source Voltage (V)  
0
4
8
12  
16  
20  
24  
V
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.49mH, RG = 25Ω, IAS = 10A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
03/16/10  
1234567...10

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