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IRF6710S2TRPBF

更新时间： 2024-11-01 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 303K
描述
DirectFET Power MOSFET

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中文翻译

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IRF6710S2TRPBF 技术参数

是否Rohs认证：符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, ISOMETRIC-2Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.34
Is Samacsys：N雪崩能效等级（Eas）：24 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：25 V最大漏极电流 (Abs) (ID)：12 A
最大漏极电流 (ID)：12 A最大漏源导通电阻：0.0059 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-XBCC-N2
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：15 W最大脉冲漏极电流 (IDM)：100 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6710S2TRPBF 数据手册

 浏览型号IRF6710S2TRPBF的Datasheet PDF文件第2页浏览型号IRF6710S2TRPBF的Datasheet PDF文件第3页浏览型号IRF6710S2TRPBF的Datasheet PDF文件第4页浏览型号IRF6710S2TRPBF的Datasheet PDF文件第5页浏览型号IRF6710S2TRPBF的Datasheet PDF文件第6页浏览型号IRF6710S2TRPBF的Datasheet PDF文件第7页 
PD - 97124D  
IRF6710S2TRPbF  
IRF6710S2TR1PbF  
DirectFET™ Power MOSFET ‚  
l RoHS Compliant Containing No Lead and Halogen Free   
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible   
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
l Ultra Low Package Inductance  
25V max ±20V max  
4.5mΩ@ 10V 9.0mΩ@ 4.5V  
l Optimized for High Frequency Switching   
l Ideal for CPU Core DC-DC Converters  
l Optimized for Control FET Application  
l Compatible with existing Surface Mount Techniques   
l 100% Rg tested  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
8.8nC  
3.0nC  
1.3nC  
8.0nC 4.4nC  
1.8V  
DirectFET™ ISOMETRIC  
S1  
Applicable DirectFET Outline and Substrate Outline   
S2  
SB  
M2  
M4  
L4  
L6  
L8  
S1  
Description  
The IRF6710S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to  
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is  
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-  
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6710S2TRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in  
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of  
processors operating at higher frequencies. The IRF6710S2TRPbF has been optimized for the control FET socket of synchronous buck  
operating from 12 volt bus converters.  
Absolute Maximum Ratings  
Max.  
25  
Parameter  
Drain-to-Source Voltage  
Units  
V
VDS  
±20  
12  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
10  
A
@ TA = 70°C  
@ TC = 25°C  
37  
100  
24  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
10  
20  
15  
10  
5
12  
10  
8
I = 10A  
D
V
= 20V  
I
= 12A  
D
DS  
VDS= 13V  
6
T
T
= 125°C  
= 25°C  
J
4
2
J
0
0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0  
, Gate-to-Source Voltage (V)  
0
4
8
12  
16  
20  
24  
V
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.49mH, RG = 25Ω, IAS = 10A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
03/16/10  
1234567...10

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IRF6710S2TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6710S2TR1PBF INFINEON

类似代替

 DirectFET Power MOSFET

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