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IRF6691PBF

更新时间： 2024-09-14 19:53:43
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 655K
描述
Power Field-Effect Transistor, 32A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3

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IRF6691PBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-G2
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
雪崩能效等级（Eas）：230 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (ID)：32 A最大漏源导通电阻：0.0018 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：260 A
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6691PBF 数据手册

 浏览型号IRF6691PBF的Datasheet PDF文件第2页浏览型号IRF6691PBF的Datasheet PDF文件第3页浏览型号IRF6691PBF的Datasheet PDF文件第4页浏览型号IRF6691PBF的Datasheet PDF文件第5页浏览型号IRF6691PBF的Datasheet PDF文件第6页浏览型号IRF6691PBF的Datasheet PDF文件第7页 
PD - 97204  
PROVISIONAL  
IRF6691PbF  
IRF6691TRPbF  
DirectFET™ Power MOSFET ‚  
l RoHs Compliant   
Typical values (unless otherwise specified)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
20V max ±12V max  
VGS  
RDS(on)  
RDS(on)  
1.2mΩ@ 10V 1.8mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
47nC  
15nC  
4.4nC  
26nC  
30nC  
2.0V  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MT  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-  
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and  
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing  
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,  
improving previous best thermal resistance by 80%.  
The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package  
inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr  
of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal  
for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro-  
cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET  
sockets.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
Units  
VDS  
20  
±12  
32  
V
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
26  
A
180  
260  
230  
DM  
EAS  
mJ  
A
Single Pulse Avalanche Energy  
Avalanche Current  
IAR  
26  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
10  
9
8
7
6
5
4
3
2
1
0
I = 17A  
D
I
= 32A  
V
V
= 16V  
= 10V  
D
DS  
DS  
T
= 125°C  
J
T
3
= 25°C  
4
J
2
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
60  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage  
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.72mH, RG = 25Ω, IAS = 26A.  
05/18/06  
Document Number: 91332  
www.vishay.com  
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