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IRF6691

更新时间： 2024-10-31 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体肖特基二极管晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 229K
描述
HEXFET Power MOSFET plus Schottky Diode

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中文翻译

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IRF6691 数据手册

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PD - 95867A  
IRF6691  
HEXFET® Power MOSFET plus Schottky Diode  
l Application Specific MOSFETs  
l Integrates Monolithic Trench Schottky Diode  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
VDSS  
20V  
RDS(on) max  
Qg(typ.)  
Ω
2.5m @VGS = 4.5V  
47nC  
Ω
1.8m @VGS = 10V  
l Low Reverse Recovery Losses  
l Low Switching Losses  
l Low Reverse Recovery Charge and Low Vf  
l Low Profile (<0.7 mm)  
l Dual Sided Cooling Compatible  
l Compatible with existing Surface Mount Techniques  
DirectFET™ ISOMETRIC  
MT  
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)  
MT  
SQ  
SX  
ST  
MQ  
MX  
Description  
The IRF6691 combines IR’s industry leading DirectFET package technology with the latest monolithic die technology,  
which integrates MOSFET plus free-wheeling Schottky diode. The DirectFET package is compatible with existing layout  
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET  
package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal  
resistance by 80%.  
The IRF6691 is characterized with reduced on resistance (RDS(on)), reverse recovery charge (Qrr) and source to drain  
voltage (VSD) to reduce conduction, reverse recovery and deadtime losses. These reduced total losses along with high  
Cdv/dt immunity make this product ideal for high efficiency DC-DC converters that power the latest generation of proces-  
sors operating at higher frequencies. The IRF6691 has been optimized for parameters that are critical for synchronous  
MOSFET sockets operating in 12 volt buss converters.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain-to-Source Voltage  
20  
±12  
V
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TC = 25°C  
180  
D
D
D
@ TA = 25°C  
@ TA = 70°C  
32  
A
26  
260  
DM  
Power Dissipation  
P
P
P
@TA = 25°C  
@TA = 70°C  
@TC = 25°C  
2.8  
D
D
D
Power Dissipation  
1.8  
W
Power Dissipation  
89  
Linear Derating Factor  
0.022  
-40 to + 150  
W/°C  
°C  
Operating Junction and  
T
J
Storage Temperature Range  
T
STG  
Thermal Resistance  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
45  
Units  
Rθ  
Rθ  
Rθ  
Rθ  
Rθ  
Junction-to-Ambient  
JA  
Junction-to-Ambient  
Junction-to-Ambient  
Junction-to-Case  
–––  
–––  
1.4  
JA  
°C/W  
JA  
–––  
1.0  
JC  
Junction-to-PCB Mounted  
–––  
J-PCB  
Notes  through ˆare on page 10  
www.irf.com  
1
11/3/04  
1234567...10

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