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IRF6678PBF

更新时间： 2024-11-01 04:23:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 254K
描述
DirectFET Power MOSFET

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IRF6678PBF 数据手册

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PD - 97223  
IRF6678PbF  
IRF6678TRPbF  
l RoHs Compliant   
DirectFET™ Power MOSFET ‚  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
l Ideal for CPU Core DC-DC Converters  
l Low Conduction Losses  
Typical values (unless otherwise specified)  
VDSS  
VGS  
RDS(on)  
RDS(on)  
30V max ±20V max  
1.7mΩ@ 10V 2.3mΩ@ 4.5V  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
l High Cdv/dt Immunity  
43nC  
15nC  
4.0nC  
46nC  
28nC  
1.8V  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MX  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6678PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6678PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to  
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-  
ers that power high current loads such as the latest generation of microprocessors. The IRF6678PbF has been optimized for parameters that  
are critical in synchronous buck converter’s SyncFET sockets.  
Absolute Maximum Ratings  
Max.  
30  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
30  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
24  
@ TA = 70°C  
@ TC = 25°C  
A
150  
240  
210  
24  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
20  
15  
10  
5
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
I = 23A  
D
I
= 29A  
D
V
= 24V  
= 15V  
DS  
V
DS  
T
= 125°C  
J
T
3
= 25°C  
J
0
0
1
2
4
5
6
7
8
9
10  
0
10  
20  
30  
40  
50  
60  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical On-Resistance vs. Gate Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 23A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
06/15/06  
1234567...10

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