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IRF6665

更新时间： 2024-09-08 22:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 229K
描述
DIGITAL AUDIO MOSFET

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中文翻译

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IRF6665 数据手册

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PD - 96900  
DIGITAL AUDIO MOSFET  
IRF6665  
Features  
Key Parameters  
• Latest MOSFET Silicon technology  
VDS  
100  
V
• Key parameters optimized for Class-D audio amplifier applications  
• Low RDS(on) for improved efficiency  
m:  
nC  
RDS(on) typ. @ VGS = 10V  
Qg typ.  
53  
8.7  
1.9  
• Low Qg for better THD and improved efficiency  
• Low Qrr for better THD and lower EMI  
RG(int) typ.  
• Low package stray inductance for reduced ringing and lower EMI  
• Can deliver up to 100W per channel into 8Ω with no heatsink Š  
• Dual sided cooling compatible  
· Compatible with existing surface mount technologies  
· Lead and Bromide Free  
DirectFET™ ISOMETRIC  
SH  
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)  
SQ  
SX  
ST  
SH  
MQ  
MX  
MT  
MN  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing  
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate  
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.  
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and  
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage  
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power  
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is  
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal  
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient,  
robust and reliable device for Class-D audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
100  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
± 20  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
@ TC = 25°C  
@ T = 25°C  
A
19  
4.2  
D
D
A
I
I
@ T = 70°C  
A
3.4  
34  
D
DM  
P
P
P
@TC = 25°C  
@TA = 25°C  
@TA = 70°C  
Maximum Power Dissipation  
Power Dissipation  
42  
2.2  
1.4  
W
D
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.017  
-40 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Typ.  
Max.  
Units  
Rθ  
JA  
–––  
12.5  
20  
58  
°C/W  
Rθ  
JA  
Junction-to-Ambient  
–––  
–––  
3.0  
Rθ  
JA  
Junction-to-Ambient  
Rθ  
JC  
Junction-to-Case  
–––  
1.4  
Rθ  
J-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through Š are on page 2  
www.irf.com  
1
10/11/04  
12345678

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