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IRF6665TR1

更新时间： 2024-09-09 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 611K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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中文翻译

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IRF6665TR1 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：,Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.79
配置：Single最大漏极电流 (Abs) (ID)：19 A
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-609代码：e0
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：42 W
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)Base Number Matches：1

IRF6665TR1 数据手册

 浏览型号IRF6665TR1的Datasheet PDF文件第2页浏览型号IRF6665TR1的Datasheet PDF文件第3页浏览型号IRF6665TR1的Datasheet PDF文件第4页浏览型号IRF6665TR1的Datasheet PDF文件第5页浏览型号IRF6665TR1的Datasheet PDF文件第6页浏览型号IRF6665TR1的Datasheet PDF文件第7页 
PD - 96900C  
IRF6665  
DIGITAL AUDIO MOSFET  
Key Parameters  
Features  
• Latest MOSFET Silicon technology  
VDS  
100  
V
• Key parameters optimized for Class-D audio amplifier  
applications  
• Low RDS(on) for improved efficiency  
• Low Qg for better THD and improved efficiency  
• Low Qrr for better THD and lower EMI  
• Low package stray inductance for reduced ringing and lower  
EMI  
m:  
nC  
RDS(on) typ. @ VGS = 10V  
Qg typ.  
53  
8.7  
1.9  
RG(int) typ.  
• Can deliver up to 100W per channel into 8Ω with no heatsink Š  
• Dual sided cooling compatible  
· Compatible with existing surface mount technologies  
· RoHS compliant containing no lead or bromide  
DirectFET™ ISOMETRIC  
SH  
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)  
SQ  
SX  
ST  
SH  
MQ  
MX  
MT  
MN  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the  
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse  
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as  
efficiency, THD, and EMI.  
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic  
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI  
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET TM package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The  
DirectFET TM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-  
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for  
Class-D audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
100  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
± 20  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
@ TC = 25°C  
@ T = 25°C  
A
19  
4.2  
D
D
A
I
I
@ T = 70°C  
A
3.4  
34  
D
DM  
P
P
P
@TC = 25°C  
@TA = 25°C  
@TA = 70°C  
Maximum Power Dissipation  
Power Dissipation  
42  
2.2  
1.4  
W
D
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.017  
-40 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Typ.  
Max.  
Units  
Rθ  
JA  
–––  
12.5  
20  
58  
°C/W  
Rθ  
JA  
Junction-to-Ambient  
–––  
–––  
3.0  
Rθ  
JA  
Junction-to-Ambient  
Rθ  
JC  
Junction-to-Case  
–––  
1.4  
Rθ  
J-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through Š are on page 2  
www.irf.com  
1
11/16/05  
1234567...10

中文翻译

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IRF6665TR1 替代型号

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