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IRF6674TR1PBF

更新时间： 2024-11-01 12:56:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 251K
描述
Compatible with existing Surface Mount Techniques

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IRF6674TR1PBF 数据手册

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PD - 97133  
IRF6674TRPbF  
DirectFET™ Power MOSFET ‚  
Typical values (unless otherwise specified)  
l RoHS Compliant   
VDSS  
VGS  
RDS(on)  
9.0mΩ@ 10V  
Vgs(th)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
60V max ±20V max  
Qg tot  
Qgd  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
24nC  
8.3nC  
4.0V  
l Low Conduction Losses  
l High Cdv/dt Immunity  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SH  
SJ  
SP  
MZ  
MN  
Description  
The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques, when application noteAN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows  
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input  
voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency  
and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC-  
DC converters.  
Absolute Maximum Ratings  
Max.  
60  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
13.4  
10.7  
67  
Gate-to-Source Voltage  
V
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
I
@ TA = 25°C  
D
D
D
A
@ TA = 70°C  
@ TC = 25°C  
134  
98  
DM  
EAS  
IAS  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
13.4  
14  
12  
10  
8
50  
40  
30  
20  
10  
0
I = 13.4A  
D
V
= 48V  
= 30V  
I
= 13.4A  
DS  
D
V
DS  
6
T
= 125°C  
J
4
2
T
= 25°C  
14  
J
0
4
6
8
10  
12  
16  
0
10  
20  
30  
V
, Gate-to-Source Voltage (V)  
GS  
Q
Total Gate Charge (nC)  
G
Fig 1. Typical On-Resistance vs. Gate Voltage  
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.272mH, RG = 25Ω, IAS = 13.4A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
4/24/08  
1234567...9

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IRF6674TR1PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6674TRPBF INFINEON

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