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IRF6668TRBF

更新时间： 2024-11-01 04:23:15
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英飞凌 - INFINEON /
页数 文件大小 规格书
9页 627K
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DirectFET Power MOSFET

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IRF6668TRBF 数据手册

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PD - 97232A  
IRF6668PbF  
IRF6668TRPbF  
DirectFET™ Power MOSFET ‚  
l RoHs Compliant   
Typical values (unless otherwise specified)  
l Lead-Free (Qualified up to 260°C Reflow)  
l Application Specific MOSFETs  
RDS(on)  
VDSS  
VGS  
12mΩ@ 10V  
l Ideal for High Performance Isolated Converter  
Primary Switch Socket  
l Optimized for Synchronous Rectification  
80V max ±20V max  
Qg tot Qgd  
Qgs2  
Qrr  
Qoss Vgs(th)  
22nC  
7.8nC 1.6nC  
40nC  
12nC  
4.0V  
l Low Conduction Losses  
l High Cdv/dt Immunity  
l Low Profile (<0.7mm)  
l Dual Sided Cooling Compatible   
l Compatible with existing Surface Mount Techniques   
DirectFET™ ISOMETRIC  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)  
SQ  
SX  
ST  
MQ  
MX  
MT  
MZ  
Description  
The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-  
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The  
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and  
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing  
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,  
improving previous best thermal resistance by 80%.  
The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V  
ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated  
isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables  
high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high  
performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
80  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
±20  
55  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TC = 25°C  
D
D
44  
@ TC = 70°C  
A
170  
24  
DM  
EAS  
IAR  
Single Pulse Avalanche Energy  
Avalanche Current  
mJ  
A
23  
60  
50  
40  
30  
20  
10  
0
12.0  
10.0  
8.0  
I
= 12A  
I = 12A  
D
D
V
= 64V  
= 40V  
DS  
V
DS  
6.0  
T
= 125°C  
J
4.0  
2.0  
T
= 25°C  
8
J
0.0  
4
6
10  
12  
14  
16  
0
2
4
6
8
10 12 14 16 18 20 22 24  
Q , Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage  
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage  
Notes:  
„ TC measured with thermocouple mounted to top (Drain) of part.  
ꢀ Repetitive rating; pulse width limited by max. junction temperature.  
† Starting TJ = 25°C, L = 0.088mH, RG = 25Ω, IAS = 23A.  
 Click on this section to link to the appropriate technical paper.  
‚ Click on this section to link to the DirectFET Website.  
ƒ Surface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
08/28/06  
1234567...9

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