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IRF6665TRPBF PDF预览

IRF6665TRPBF

更新时间： 2024-09-09 12:50:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 238K
描述
Latest MOSFET Silicon technology

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中文翻译

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IRF6665TRPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：ROHS COMPLIANT, ISOMETRIC-2Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：15 weeks
风险等级：0.8其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：11 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：19 A最大漏极电流 (ID)：4.2 A
最大漏源导通电阻：0.062 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N2JESD-609代码：e1
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：42 W最大脉冲漏极电流 (IDM)：34 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：NO LEAD端子位置：BOTTOM
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

IRF6665TRPBF 数据手册

 浏览型号IRF6665TRPBF的Datasheet PDF文件第2页浏览型号IRF6665TRPBF的Datasheet PDF文件第3页浏览型号IRF6665TRPBF的Datasheet PDF文件第4页浏览型号IRF6665TRPBF的Datasheet PDF文件第5页浏览型号IRF6665TRPBF的Datasheet PDF文件第6页浏览型号IRF6665TRPBF的Datasheet PDF文件第7页 
PD - 97230A  
IRF6665PbF  
DIGITAL AUDIO MOSFET  
IRF6665TRPbF  
Key Parameters  
Features  
• Latest MOSFET Silicon technology  
VDS  
100  
V
• Key parameters optimized for Class-D audio amplifier  
applications  
• Low RDS(on) for improved efficiency  
• Low Qg for better THD and improved efficiency  
• Low Qrr for better THD and lower EMI  
• Low package stray inductance for reduced ringing and lower  
EMI  
m:  
nC  
RDS(on) typ. @ VGS = 10V  
Qg typ.  
53  
8.7  
1.9  
RG(int) typ.  
• Can deliver up to 100W per channel into 8Ω with no heatsink Š  
• Dual sided cooling compatible  
· Compatible with existing surface mount technologies  
· RoHS compliant containing no lead or bromide  
·Lead-Free (Qualified up to 260°C Reflow)  
DirectFET™ ISOMETRIC  
SH  
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)  
SQ  
SX  
ST  
SH  
MQ  
MX  
MT  
MN  
Description  
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the  
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse  
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as  
efficiency, THD, and EMI.  
The IRF6665PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic  
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI  
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection  
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The  
DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-  
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for  
Class-D audio amplifier applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
100  
Units  
V
VDS  
VGS  
Gate-to-Source Voltage  
± 20  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
@ TC = 25°C  
@ T = 25°C  
A
19  
4.2  
D
D
A
I
I
@ T = 70°C  
A
3.4  
34  
D
DM  
P
P
P
@TC = 25°C  
@TA = 25°C  
@TA = 70°C  
Maximum Power Dissipation  
Power Dissipation  
42  
2.2  
1.4  
W
D
D
D
Power Dissipation  
Linear Derating Factor  
Operating Junction and  
0.017  
-40 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Ambient  
Typ.  
Max.  
Units  
Rθ  
JA  
–––  
12.5  
20  
58  
°C/W  
Rθ  
JA  
Junction-to-Ambient  
–––  
–––  
3.0  
Rθ  
JA  
Junction-to-Ambient  
Rθ  
JC  
Junction-to-Case  
–––  
1.4  
Rθ  
J-PCB  
Junction-to-PCB Mounted  
–––  
Notes  through Š are on page 2  
www.irf.com  
1
08/25/06  
1234567...10

中文翻译

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IRF6665TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6665TR1 INFINEON

类似代替

 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF6665TR1PBF INFINEON

功能相似

 Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, M
IRF6665 INFINEON

功能相似

 DIGITAL AUDIO MOSFET

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