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IRF6662

更新时间： 2024-09-08 22:51:35
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英飞凌 - INFINEON /
页数 文件大小 规格书
9页 269K
描述
DirectFet Power MOSFET Typical values (unless otherwise specified)

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IRF6662 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：LEAD FREE, ISOMETRIC-3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.17雪崩能效等级（Eas）：39 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (ID)：8.3 A
最大漏源导通电阻：0.022 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3JESD-609代码：e0
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：66 A
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6662 数据手册

 浏览型号IRF6662的Datasheet PDF文件第2页浏览型号IRF6662的Datasheet PDF文件第3页浏览型号IRF6662的Datasheet PDF文件第4页浏览型号IRF6662的Datasheet PDF文件第5页浏览型号IRF6662的Datasheet PDF文件第6页浏览型号IRF6662的Datasheet PDF文件第7页 
PD - 97039  
IRF6662  
DirectFET™ Power MOSFET ꢀ  
Typical values (unless otherwise specified)  
ꢂLead and Bromide Free ꢁ  
VDSS  
100V max ±20V max  
VGS  
RDS(on)  
17.5mΩ@ 10V  
Vgs(th)  
ꢂLow Profile (<0.7 mm)  
ꢂDual Sided Cooling Compatible ꢁ  
ꢂUltra Low Package Inductance  
ꢂOptimized for High Frequency Switching ꢁ  
Qg tot  
Qgd  
22nC  
6.8nC  
3.9V  
ꢂIdeal for High Performance Isolated Converter  
Primary Switch Socket  
ꢂOptimized for Synchronous Rectification  
ꢂLow Conduction Losses  
ꢂCompatible with existing Surface Mount Techniques ꢁ  
DirectFET™ ISOMETRIC  
MZ  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ꢁ  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6662 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the  
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with  
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,  
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided  
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6662 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications  
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled  
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,  
and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
8.3  
6.6  
47  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V ꢃ  
Continuous Drain Current, VGS @ 10V ꢃ  
Continuous Drain Current, VGS @ 10V ꢄ  
Pulsed Drain Current ꢅ  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
66  
DM  
EAS  
IAR  
39  
Single Pulse Avalanche Energy ꢆ  
Avalanche Current ꢅ  
mJ  
A
4.9  
100  
80  
60  
40  
20  
0
12.0  
10.0  
8.0  
I
= 4.9A  
I = 4.9A  
D
D
V
V
V
= 80V  
DS  
= 50V  
= 20V  
DS  
DS  
6.0  
T
T
= 125°C  
J
J
4.0  
2.0  
= 25°C  
12  
0.0  
4
6
8
10  
14  
16  
0
5
10  
15  
20  
25  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Typical Total Gate Charge vs.  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Gate-to-Source Voltage  
Notes:  
ꢄTC measured with thermocouple mounted to top (Drain) of part.  
ꢅRepetitive rating; pulse width limited by max. junction temperature.  
ꢆStarting TJ = 25°C, L = 3.2mH, RG = 25Ω, IAS = 4.9A.  
ꢁClick on this section to link to the appropriate technical paper.  
ꢀClick on this section to link to the DirectFET Website.  
ꢃSurface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
08/05/05  
1234567...9

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IRF6662 替代型号

型号 品牌 替代类型 描述 数据表
IRF6662PBF INFINEON

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