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IRF6662PBF

更新时间： 2024-09-09 21:16:47
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 248K
描述
Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3

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IRF6662PBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-XBCC-N3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.17
雪崩能效等级（Eas）：39 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：8.3 A最大漏极电流 (ID)：8.3 A
最大漏源导通电阻：0.022 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-XBCC-N3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：89 W最大脉冲漏极电流 (IDM)：66 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRF6662PBF 数据手册

 浏览型号IRF6662PBF的Datasheet PDF文件第2页浏览型号IRF6662PBF的Datasheet PDF文件第3页浏览型号IRF6662PBF的Datasheet PDF文件第4页浏览型号IRF6662PBF的Datasheet PDF文件第5页浏览型号IRF6662PBF的Datasheet PDF文件第6页浏览型号IRF6662PBF的Datasheet PDF文件第7页 
PD - 97243A  
IRF6662PbF  
IRF6662TRPbF  
DirectFET™ Power MOSFET ꢀ  
Typical values (unless otherwise specified)  
ꢆRoHs Compliant ꢁ  
RDS(on)  
VDSS  
VGS  
ꢆLead-Free (Qualified up to 260°C Reflow)  
ꢆApplication Specific MOSFETs  
17.5mΩ@ 10V  
100V max ±20V max  
Qg tot Qgd  
Qgs2  
Qrr  
50nC  
Qoss Vgs(th)  
ꢆIdeal for High Performance Isolated Converter  
Primary Switch Socket  
22nC  
6.8nC 1.2nC  
11nC  
3.9V  
ꢆOptimized for Synchronous Rectification  
ꢆLow Conduction Losses  
ꢆHigh Cdv/dt Immunity  
S
S
ꢆLow Profile (<0.7mm)  
G
D
D
ꢆDual Sided Cooling Compatible ꢁ  
ꢆCompatible with existing Surface Mount Techniques ꢁ  
DirectFET™ ISOMETRIC  
MZ  
MZ  
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)ꢁ  
SQ  
SX  
ST  
MQ  
MX  
MT  
Description  
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve  
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible  
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering  
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual  
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.  
The IRF6662PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom  
applications (36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device  
coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability  
improvements, and makes this device ideal for high performance isolated DC-DC converters.  
Absolute Maximum Ratings  
Max.  
100  
±20  
8.3  
6.6  
47  
Parameter  
Units  
V
VDS  
Drain-to-Source Voltage  
V
Gate-to-Source Voltage  
GS  
Continuous Drain Current, VGS @ 10V ꢂ  
Continuous Drain Current, VGS @ 10V ꢂ  
Continuous Drain Current, VGS @ 10V ꢃ  
Pulsed Drain Current ꢄ  
I
I
I
I
@ TA = 25°C  
D
D
D
@ TA = 70°C  
@ TC = 25°C  
A
66  
DM  
EAS  
IAR  
39  
Single Pulse Avalanche Energy ꢅ  
mJ  
A
4.9  
Avalanche Current  
ꢄ
100  
80  
60  
40  
20  
0
12.0  
10.0  
8.0  
I
= 4.9A  
I
= 4.9A  
D
D
V
V
V
= 80V  
= 50V  
= 20V  
DS  
DS  
DS  
6.0  
T
T
= 125°C  
J
J
4.0  
2.0  
= 25°C  
12  
0.0  
4
6
8
10  
14  
16  
0
5
10  
15  
20  
25  
Q
Total Gate Charge (nC)  
G
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Typical Total Gate Charge vs.  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Gate-to-Source Voltage  
Notes:  
ꢃTC measured with thermocouple mounted to top (Drain) of part.  
ꢄRepetitive rating; pulse width limited by max. junction temperature.  
ꢅStarting TJ = 25°C, L = 3.2mH, RG = 25Ω, IAS = 4.9A.  
ꢁClick on this section to link to the appropriate technical paper.  
ꢀClick on this section to link to the DirectFET Website.  
ꢂSurface mounted on 1 in. square Cu board, steady state.  
www.irf.com  
1
08/25/06  
1234567...10

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IRF6662PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF6662 INFINEON

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