PD - 97226A
IRF6655PbF
IRF6655TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs Compliant
RDS(on)
VDSS
VGS
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
53mΩ@ 10V
100V max ±20V max
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Ideal for Control FET sockets in 36V-75V in
Synchronous Buck applications
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
8.7nC 2.8nC 0.58nC 37nC
4.5nC
4.0V
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
SH
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
SH
MQ
MX
MT
MN
Description
The IRF6655PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The
DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by
80%.
The IRF6655PbF is optimized for low power primary side bridge topologies in isolated DC-DC applications, and for high side control FET sockets
in non-isolated synchronous buck DC-DC applications for use in wide range universal Telecom systems (36V – 75V), and for secondary side
synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal perfor-
mance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
100
±20
4.2
3.4
19
Parameter
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
A
34
DM
EAS
IAR
11
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
5.0
200
180
160
140
120
100
80
12.0
10.0
8.0
V
V
V
= 80V
I = 5.0A
D
I
= 5.0A
DS
DS
DS
D
= 50V
= 20V
T
= 125°C
J
6.0
4.0
60
40
20
0
2.0
T
= 25°C
12
J
0.0
4
6
8
10
14
16
18
0
2
4
6
8
10
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical On-Resistance Vs. Gate Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.89mH, RG = 25Ω, IAS = 5.0A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
08/25/06