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IPB22N03S4L15ATMA1 PDF预览

IPB22N03S4L15ATMA1

更新时间: 2024-09-13 19:46:43
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲晶体管
页数 文件大小 规格书
9页 190K
描述
Power Field-Effect Transistor, 22A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

IPB22N03S4L15ATMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.74其他特性:ULTRA LOW RESISTANCE
雪崩能效等级(Eas):20 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):22 A最大漏源导通电阻:0.0146 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):88 A
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPB22N03S4L15ATMA1 数据手册

 浏览型号IPB22N03S4L15ATMA1的Datasheet PDF文件第2页浏览型号IPB22N03S4L15ATMA1的Datasheet PDF文件第3页浏览型号IPB22N03S4L15ATMA1的Datasheet PDF文件第4页浏览型号IPB22N03S4L15ATMA1的Datasheet PDF文件第5页浏览型号IPB22N03S4L15ATMA1的Datasheet PDF文件第6页浏览型号IPB22N03S4L15ATMA1的Datasheet PDF文件第7页 
IPB22N03S4L-15  
IPI22N03S4L-15, IPP22N03S4L-15  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
30  
14.6  
22  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• Ultra low Rds(on)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB22N03S4L-15  
IPI22N03S4L-15  
IPP22N03S4L-15  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
4N03L15  
4N03L15  
4N03L15  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
22  
22  
A
V
GS=10 V2)  
Pulsed drain current2)  
I D,pulse  
EAS  
T C=25 °C  
I D=22 A  
88  
20  
Avalanche energy, single pulse  
Avalanche current, single pulse  
Gate source voltage  
mJ  
A
I AS  
T C=25 °C  
22  
VGS  
±16  
31  
V
Ptot  
T C=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
°C  
Rev. 2.0  
page 1  
2007-03-09  

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