Datasheet > IPB35N10S3L-26

IPB35N10S3L-26

更新时间： 2024-09-14 01:17:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	177K
描述
OptiMOSâ¢-T Power-Transistor

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IPB35N10S3L-26 数据手册

IPB35N10S3L-26

OptiMOS™-T Power-Transistor

Product Summary

V _DS

100

26.3

R _DS(on),max

I _D

Features

PG-TO263-3-2

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB35N10S3L-26

PG-TO263-3-2

3N10L26

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25°C, V _GS=10V

Continuous drain current

T _C=100°C, V _GS=10V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E _AS

I _AS

T _C=25°C

140

175

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

I _D=17A

Gate source voltage²⁾

V _GS

P _tot

±20

T _C=25°C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2011-05-17

12 3 4 5 6 7...9

中文翻译

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