Datasheet > IPB45N06S3-16

IPB45N06S3-16

更新时间： 2024-09-13 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	240K
描述
OptiMOS-T Power-Transistor

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替代型号

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IPB45N06S3-16 数据手册

IPB45N06S3-16

IPI45N06S3-16, IPP45N06S3-16

OptiMOS^®-T Power-Transistor

Product Summary

V _DS

Features

15.4

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

_DS(on),max(SMD version)

mΩ

I _D

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (lead free)

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• Ultra low Rds(on)

• Avalanche tested

Type

Package

Ordering Code Marking

IPB45N06S3-16

IPI45N06S3-16

IPP45N06S3-16

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

SP0001-02224

SP0001-02217

SP0001-02218

3N0616

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25 °C, V _GS=10 V

T _C=100 °C,

_GS=10 V²⁾

Pulsed drain current²⁾

Avalanche energy, single pulse³⁾

Drain gate voltage²⁾

I _D,pulse

E _AS

T _C=25 °C

I _D= 27.5 A

180

V _DG

Gate source voltage⁴⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2005-11-25

12 3 4 5 6 7...9

中文翻译

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IPB45N06S3-16 替代型号

型号	品牌	替代类型	描述	数据表
IPD144N06NG	INFINEON	功能相似	OptiMOS㈢ Power-Transistor

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