Datasheet > IPB45P03P4L-11

IPB45P03P4L-11

更新时间： 2024-11-18 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	170K
描述
OptiMOS-P2 Power-Transistor

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替代型号

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IPB45P03P4L-11 数据手册

IPB45P03P4L-11

IPI45P03P4L-11, IPP45P03P4L-11

OptiMOS^®-P2 Power-Transistor

Product Summary

V_DS

-30

10.8

-45

_DS(on)(SMD Version)

mΩ

I _D

Features

• P-channel - Logic Level - Enhancement mode

PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Intended for reverse battery protection

Type

Package

Marking

4P03L11

IPB45P03P4L-11

IPI45P03P4L-11

IPP45P03P4L-11

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C,

_GS=-10V¹⁾

I _D

Continuous drain current

-45

T _C=100°C,

_GS=-10V²⁾

-42

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

-180

110

I _D=-22.5A

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

I _AS

-45

V_GS

+5/-16

P_tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.0

page 1

2008-07-29

12 3 4 5 6 7...9

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IPB45P03P4L-11 替代型号

型号	品牌	替代类型	描述	数据表
IPD50P03P4L-11	INFINEON	类似代替	OptiMOS-P2 Power-Transistor

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