Datasheet > IPB50N12S3L-15

IPB50N12S3L-15

更新时间： 2024-10-31 07:29:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	404K
描述
Power Field-Effect Transistor

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中文翻译

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IPB50N12S3L-15 数据手册

IPB50N12S3L-15

IPI50N12S3L-15, IPP50N12S3L-15

OptiMOS^®-T Power-Transistor

Product Summary

V_DS

120

15.4

R_DS(on),max(SMD version)

I_D

Features

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

Type

Package

Marking

IPB50N12S3L-15

IPI50N12S3L-15

IPP50N12S3L-15

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

3N12L15

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

I _D

T _C=25 °C, V_GS=10 V

Continuous drain current

T _C=100 °C,

V_GS=10 V¹⁾

Pulsed drain current¹⁾

I _D,pulse

E_AS

T _C=25 °C

200

330

Avalanche energy, single pulse¹⁾

Avalanche current, single pulse

Gate source voltage

I _D=25A

I _AS

V_GS

±20

100

P_tot

T _C=25 °C

Power dissipation

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2016-06-20

12 3 4 5 6 7...9

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