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IPB47N10SL-26 PDF预览

IPB47N10SL-26

更新时间: 2024-11-05 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
8页 569K
描述
SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level

IPB47N10SL-26 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life零件包装代码:D2PAK
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.27
Is Samacsys:N其他特性:AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):400 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):47 A
最大漏极电流 (ID):47 A最大漏源导通电阻:0.04 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):175 W最大脉冲漏极电流 (IDM):188 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPB47N10SL-26 数据手册

 浏览型号IPB47N10SL-26的Datasheet PDF文件第2页浏览型号IPB47N10SL-26的Datasheet PDF文件第3页浏览型号IPB47N10SL-26的Datasheet PDF文件第4页浏览型号IPB47N10SL-26的Datasheet PDF文件第5页浏览型号IPB47N10SL-26的Datasheet PDF文件第6页浏览型号IPB47N10SL-26的Datasheet PDF文件第7页 
IPI47N10SL-26  
IPP47N10SL-26, IPB47N10SL-26  
SIPMOS =Power-Transistor  
Product Summary  
Feature  
V
100  
26  
V
m
A
DS  
N-Channel  
Enhancement mode  
Logic Level  
R
DS(on)  
I
47  
D
P-TO262-3-1  
P-TO263-3-2  
P-TO220-3-1  
175°C operating temperature  
Avalanche rated  
dv/dt rated  
Green package (lead free)  
Type  
IPP47N10SL-26  
IPB47N10SL-26  
IPI47N10SL-26  
Package  
Ordering Code  
Marking  
N10L26  
N10L26  
N10L26  
PG-TO220-3-1 SP0002-25707  
PG-TO263-3-2 SP0002-25701  
PG-TO262-3-1 SP0002-25704  
Maximum Ratings,at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
47  
33  
C
T =100°C  
C
188  
Pulsed drain current  
I
D puls  
T =25°C  
C
400  
mJ  
Avalanche energy, single pulse  
E
AS  
I =47 A , V =25V, R =25  
D
DD GS  
E
17.5  
6
Avalanche energy, periodic limited by T  
Reverse diode dv/dt  
AR  
jmax  
dv/dt  
kV/µs  
I =47A, V =0V, di/dt=200A/µs  
DS  
S
Gate source voltage  
Power dissipation  
V
V
W
±20  
175  
GS  
P
tot  
T =25°C  
C
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T , T  
-55... +175  
55/175/56  
j
stg  
Page 1  
2006-02-14  

IPB47N10SL-26 替代型号

型号 品牌 替代类型 描述 数据表
IPI47N10SL-26 INFINEON

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SIPMOS Power-Transistor N-Channel Enhancement mode Logic Level
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