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IPB50N10S3L16ATMA1 PDF预览

IPB50N10S3L16ATMA1

更新时间: 2024-11-18 14:51:35
品牌 Logo 应用领域
英飞凌 - INFINEON ATM异步传输模式PC脉冲晶体管
页数 文件大小 规格书
9页 188K
描述
Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN

IPB50N10S3L16ATMA1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:14 weeks
风险等级:2.26Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:798631
Samacsys Pin Count:3Samacsys Part Category:MOSFET (N-Channel)
Samacsys Package Category:OtherSamacsys Footprint Name:PG-TO263-3-2_1
Samacsys Released Date:2018-10-26 08:38:11Is Samacsys:N
雪崩能效等级(Eas):330 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0206 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):200 A
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPB50N10S3L16ATMA1 数据手册

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IPB50N10S3L-16  
IPI50N10S3L-16, IPP50N10S3L-16  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
100  
15.4  
50  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB50N10S3L-16  
IPI50N10S3L-16  
IPP50N10S3L-16  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N10L16  
3N10L16  
3N10L16  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
Continuous drain current  
50  
37  
A
V
GS=10 V1)  
Pulsed drain current1)  
Avalanche energy, single pulse1)  
I D,pulse  
EAS  
T C=25 °C  
I D=25A  
200  
330  
50  
mJ  
A
I AS  
Avalanche current, single pulse  
Gate source voltage2)  
VGS  
±20  
100  
V
Ptot  
T C=25 °C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
°C  
Rev. 1.1  
page 1  
2008-04-09  

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