Datasheet > IPB45N06S4L-08

IPB45N06S4L-08

更新时间： 2024-09-13 11:08:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	172K
描述
OptiMOS-T2 Power-Transistor

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替代型号

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IPB45N06S4L-08 数据手册

IPB45N06S4L-08

IPI45N06S4L-08, IPP45N06S4L-08

OptiMOS^®-T2 Power-Transistor

Product Summary

V_DS

7.9

_DS(on),max(SMD version)

mΩ

I _D

Features

• N-channel - Enhancement mode

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPB45N06S4L-08

IPI45N06S4L-08

IPP45N06S4L-08

PG-TO263-3-2

PG-TO262-3-1

PG-TO220-3-1

4N06L08

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current¹⁾

I _D

T _C=25°C, V_GS=10V

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

I _D,pulse

E_AS

T _C=25°C

180

Avalanche energy, single pulse²⁾

Avalanche current, single pulse

Gate source voltage

I _D=22.5A

I _AS

V_GS

±16

P_tot

T _C=25°C

Power dissipation

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

°C

Rev. 1.0

page 1

2009-03-24

12 3 4 5 6 7...9

中文翻译

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IPB45N06S4L-08 替代型号

型号	品牌	替代类型	描述	数据表
IPB80N06S4-07	INFINEON	类似代替	OptiMOS-T2 Power-Transistor
IPB60R380C6	INFINEON	类似代替	Metal Oxide Semiconductor Field Effect Transistor
IPB120N06S4-H1	INFINEON	类似代替	OptiMOS-T2 Power-Transistor

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