Datasheet > IPB26CN10N

IPB26CN10N

更新时间： 2024-09-15 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	542K
描述
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPB26CN10N 数据手册

IPB26CN10N G IPD25CN10N G

IPI26CN10N G IPP26CN10N G

OptiMOS^™2 Power-Transistor

Features

Product Summary

V _DS

100

• N-channel, normal level

R _{DS(on),max (TO252)}

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21 *

Type

IPB26CN10N G

IPD25CN10N G

IPI26CN10N G

IPP26CN10N G

Package

Marking

PG-TO263-3

26CN10N

PG-TO252-3

25CN10N

PG-TO262-3

26CN10N

PG-TO220-3

26CN10N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

140

I _D=35 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=35 A, V _DS=80 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

-55 ... 175

55/175/56

²⁾see figure 3

jmax

=150°C and duty cycle D=0.01 for Vgs<-5V

* Except D-PAK ( TO-252 )

Rev. 1.08

page 1

2010-04-28

12 3 4 5 6 7...12

中文翻译

下载PDF

与IPB26CN10N相关器件

型号	品牌	获取价格	描述	数据表
IPB26CN10N_10	INFINEON	获取价格	OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
IPB26CN10NG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPB26CN10NGATMA1	INFINEON	获取价格	Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me
IPB26CNE8NG	INFINEON	获取价格	OptiMOS㈢2 Power-Transistor
IPB320N20N3 G	INFINEON	获取价格	英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术，适合在 48V 系统、直流-
IPB320N20N3G	INFINEON	获取价格	OptiMOSTM3 Power-Transistor Features N-channel, normal level
IPB320N20N3G_10	INFINEON	获取价格	OptiMOS3 Power Transistor
IPB320P10LM	INFINEON	获取价格	D2PAK 封装型 100 V OptiMOS? P 沟道 MOSFET 是面向电池管理、
IPB330P10NM	INFINEON	获取价格	D²PAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、
IPB339N20NM6	INFINEON	获取价格	IPB339N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the nee