型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB34CN10NG | INFINEON |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Me |
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IPB34CN10NGATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Me |
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IPB35CN10NG | INFINEON |
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OptiMOS㈢2 Power-Transistor |
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IPB35N10S3L-26 | INFINEON |
获取价格 |
OptiMOSâ¢-T Power-Transistor |
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IPB35N10S3L-26_12 | INFINEON |
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OptiMOSâ¢-T Power-Transistor |
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IPB35N10S3L-26_15 | INFINEON |
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Material Content Data Sheet |
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IPB35N10S3L26ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 35A I(D), 100V, 0.0322ohm, 1-Element, N-Channel, Silicon, M |
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IPB407N30N | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor |
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IPB407N30N_15 | INFINEON |
获取价格 |
Metal Oxide Semiconductor Field Effect Transistor |
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IPB45N04S4L-08 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor |
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