Datasheet > IPB26CN10N_10

IPB26CN10N_10

更新时间： 2024-11-05 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	542K
描述
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

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中文翻译

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数据手册

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IPB26CN10N_10 数据手册

IPB26CN10N G IPD25CN10N G

IPI26CN10N G IPP26CN10N G

OptiMOS^™2 Power-Transistor

Features

Product Summary

V _DS

100

• N-channel, normal level

R _{DS(on),max (TO252)}

I _D

mΩ

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• 175 °C operating temperature

• Pb-free lead plating; RoHS compliant

• Qualified according to JEDEC¹⁾for target application

• Ideal for high-frequency switching and synchronous rectification

• Halogen-free according to IEC61249-2-21 *

Type

IPB26CN10N G

IPD25CN10N G

IPI26CN10N G

IPP26CN10N G

Package

Marking

PG-TO263-3

26CN10N

PG-TO252-3

25CN10N

PG-TO262-3

26CN10N

PG-TO220-3

26CN10N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Continuous drain current

Pulsed drain current²⁾

I _D,pulse

E _AS

140

I _D=35 A, R _GS=25 Ω

Avalanche energy, single pulse

I _D=35 A, V _DS=80 V,

di /dt =100 A/µs,

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

Gate source voltage³⁾

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

-55 ... 175

55/175/56

²⁾see figure 3

jmax

=150°C and duty cycle D=0.01 for Vgs<-5V

* Except D-PAK ( TO-252 )

Rev. 1.08

page 1

2010-04-28

12 3 4 5 6 7...12

中文翻译

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