5秒后页面跳转
IPB26CN10N_10 PDF预览

IPB26CN10N_10

更新时间: 2024-11-20 05:39:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 542K
描述
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated

IPB26CN10N_10 数据手册

 浏览型号IPB26CN10N_10的Datasheet PDF文件第2页浏览型号IPB26CN10N_10的Datasheet PDF文件第3页浏览型号IPB26CN10N_10的Datasheet PDF文件第4页浏览型号IPB26CN10N_10的Datasheet PDF文件第5页浏览型号IPB26CN10N_10的Datasheet PDF文件第6页浏览型号IPB26CN10N_10的Datasheet PDF文件第7页 
IPB26CN10N G IPD25CN10N G  
IPI26CN10N G IPP26CN10N G  
OptiMOS2 Power-Transistor  
Features  
Product Summary  
V DS  
100  
25  
V
• N-channel, normal level  
R DS(on),max (TO252)  
I D  
m  
A
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance R DS(on)  
35  
• 175 °C operating temperature  
• Pb-free lead plating; RoHS compliant  
• Qualified according to JEDEC1) for target application  
• Ideal for high-frequency switching and synchronous rectification  
• Halogen-free according to IEC61249-2-21 *  
Type  
IPB26CN10N G  
IPD25CN10N G  
IPI26CN10N G  
IPP26CN10N G  
Package  
Marking  
PG-TO263-3  
26CN10N  
PG-TO252-3  
25CN10N  
PG-TO262-3  
26CN10N  
PG-TO220-3  
26CN10N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T C=25 °C  
T C=100 °C  
T C=25 °C  
Continuous drain current  
35  
25  
A
Pulsed drain current2)  
I D,pulse  
E AS  
140  
65  
I D=35 A, R GS=25 Ω  
Avalanche energy, single pulse  
mJ  
I D=35 A, V DS=80 V,  
di /dt =100 A/µs,  
Reverse diode dv /dt  
dv /dt  
6
kV/µs  
T
j,max=175 °C  
Gate source voltage3)  
V GS  
±20  
71  
V
P tot  
T C=25 °C  
Power dissipation  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
1)J-STD20 and JESD22  
-55 ... 175  
55/175/56  
2) see figure 3  
3)  
T
jmax  
=150°C and duty cycle D=0.01 for Vgs<-5V  
* Except D-PAK ( TO-252 )  
Rev. 1.08  
page 1  
2010-04-28  

与IPB26CN10N_10相关器件

型号 品牌 获取价格 描述 数据表
IPB26CN10NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPB26CN10NGATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me
IPB26CNE8NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPB320N20N3 G INFINEON

获取价格

英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术,适合在 48V 系统、直流-
IPB320N20N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor Features N-channel, normal level
IPB320N20N3G_10 INFINEON

获取价格

OptiMOS3 Power Transistor
IPB320P10LM INFINEON

获取价格

D2PAK 封装型 100 V OptiMOS? P 沟道 MOSFET 是面向电池管理、
IPB330P10NM INFINEON

获取价格

D²PAK 封装型 100 V OptiMOS™ P 沟道 MOSFET 是面向电池管理、
IPB339N20NM6 INFINEON

获取价格

IPB339N20NM6 OptiMOS? 6 200 V?is setting the new technology standard. It addresses the nee
IPB34CN10NG INFINEON

获取价格

Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Me