Datasheet > IPB240N03S4L-R9

IPB240N03S4L-R9

更新时间： 2024-11-24 14:56:51

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	192K
描述
车规级MOSFET

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中文翻译

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数据手册

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IPB240N03S4L-R9 数据手册

IPB240N03S4L-R9

OptiMOS^™-T Power-Transistor

Product Summary

V _DS

R _DS(on)

I _D

0.92

240

Features

• N-channel - Enhancement mode

PG-TO263-7-3

• AEC qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green package (RoHS compliant)

• Ultra low Rds(on)

• 100% Avalanche tested

Type

Package

Marking

IPB240N03S4L-R9

PG-TO263-7-3

4N03LR9

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

T _C=25°C, V _GS=10V¹⁾

I _D

Continuous drain current

240

T _C=100 °C,

V _GS=10 V²⁾

Pulsed drain current²⁾

I _D,pulse

E _AS

T _C=25 °C

I _D=120 A

960

750

190

±16

231

Avalanche energy, single pulse

Avalanche current, single pulse

Gate source voltage

I _AS

V _GS

P _tot

T _C=25 °C

Power dissipation

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... +175

55/175/56

Rev. 1.1

page 1

2014-04-28

12 3 4 5 6 7...9

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