型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPB25N06S3L22ATMA1 | INFINEON |
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Power Field-Effect Transistor, 25A I(D), 55V, 0.0213ohm, 1-Element, N-Channel, Silicon, Me | |
IPB260N06N3G | INFINEON |
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OptiMOS?3 Power-Transistor | |
IPB26CN10N | INFINEON |
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OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated | |
IPB26CN10N_10 | INFINEON |
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OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated | |
IPB26CN10NG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPB26CN10NGATMA1 | INFINEON |
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Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me | |
IPB26CNE8NG | INFINEON |
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OptiMOS㈢2 Power-Transistor | |
IPB320N20N3 G | INFINEON |
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英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术,适合在 48V 系统、直流- | |
IPB320N20N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features N-channel, normal level | |
IPB320N20N3G_10 | INFINEON |
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OptiMOS3 Power Transistor |