5秒后页面跳转
IPB25N06S3L-22_07 PDF预览

IPB25N06S3L-22_07

更新时间: 2024-11-20 11:08:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 188K
描述
OptiMOS-T2 Power-Transistor

IPB25N06S3L-22_07 数据手册

 浏览型号IPB25N06S3L-22_07的Datasheet PDF文件第2页浏览型号IPB25N06S3L-22_07的Datasheet PDF文件第3页浏览型号IPB25N06S3L-22_07的Datasheet PDF文件第4页浏览型号IPB25N06S3L-22_07的Datasheet PDF文件第5页浏览型号IPB25N06S3L-22_07的Datasheet PDF文件第6页浏览型号IPB25N06S3L-22_07的Datasheet PDF文件第7页 
IPB25N06S3L-22  
IPI25N06S3L-22, IPP25N06S3L-22  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
55  
21.3  
25  
V
R
DS(on),max (SMD version)  
m  
A
I D  
Features  
• N-channel - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPB25N06S3L-22  
IPI25N06S3L-22  
IPP25N06S3L-22  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
3N06L22  
3N06L22  
3N06L22  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
25  
25  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
I D,pulse  
EAS  
I AS  
T C=25 °C  
I D=12.5 A  
100  
120  
25  
mJ  
A
Avalanche current, single pulse  
Gate source voltage3)  
VGS  
±16  
V
Ptot  
T C=25 °C  
Power dissipation  
50  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... +175  
55/175/56  
°C  
Rev. 1.1  
page 1  
2007-11-07  

与IPB25N06S3L-22_07相关器件

型号 品牌 获取价格 描述 数据表
IPB25N06S3L22ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 25A I(D), 55V, 0.0213ohm, 1-Element, N-Channel, Silicon, Me
IPB260N06N3G INFINEON

获取价格

OptiMOS?3 Power-Transistor
IPB26CN10N INFINEON

获取价格

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
IPB26CN10N_10 INFINEON

获取价格

OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated
IPB26CN10NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPB26CN10NGATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Me
IPB26CNE8NG INFINEON

获取价格

OptiMOS㈢2 Power-Transistor
IPB320N20N3 G INFINEON

获取价格

英飞凌 200V OptiMOS™ 产品采用性能先进标杆技术,适合在 48V 系统、直流-
IPB320N20N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor Features N-channel, normal level
IPB320N20N3G_10 INFINEON

获取价格

OptiMOS3 Power Transistor