Datasheet > 晶体管 > IGBT> HGT1S10N120BNST

HGT1S10N120BNST

更新时间： 2024-11-06 12:05:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
8页	201K
描述
35A, 1200V, NPT Series N-Channel IGBT

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数据手册
替代型号

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HGT1S10N120BNST 数据手册

HGTG10N120BN, HGTP10N120BN,

HGT1S10N120BNS

Data Sheet

August 2002

35A, 1200V, NPT Series N-Channel IGBT

Features

The HGTG10N120BN, HGTP10N120BN and

• 35A, 1200V, T = 25 C

HGT1S10N120BNS are Non-Punch Through (NPT) IGBT

designs. They are new members of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 140ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Avalanche Rated

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.fairchildsemi.com

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Formerly Developmental Type TA49290.

Ordering Information

Packaging

PART NUMBER

HGTG10N120BN

HGTP10N120BN

HGT1S10N120BNS

PACKAGE

BRAND

G10N120BN

JEDEC STYLE TO-247

TO-247

TO-220AB

TO-263AB

10N120BN

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S10N120BNST.

Symbol

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Rev. B1

12 3 4 5 6 7 8

中文翻译

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HGT1S10N120BNST 替代型号

型号	品牌	替代类型	描述	数据表
HGT1S10N120BNST	ONSEMI	类似代替	IGBT，1200V，NPT
HGTG11N120CND	ONSEMI	功能相似	1200 V NPT IGBT
HGTG10N120BND	ONSEMI	功能相似	1200V，NPT IGBT

与HGT1S10N120BNST相关器件

型号	品牌	获取价格	描述	数据表
HGT1S10N120CNS	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, TO-263AB
HGT1S11N120CNS	FAIRCHILD	获取价格	43A, 1200V, NPT Series N-Channel IGBT
HGT1S11N120CNS	INTERSIL	获取价格	43A, 1200V, NPT Series N-Channel IGBT
HGT1S11N120CNS	RENESAS	获取价格	43A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S11N120CNS9A	FAIRCHILD	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 22A I(C) \| TO-263AB
HGT1S12N60A4DS	ROCHESTER	获取价格	54A, 600V, N-CHANNEL IGBT, TO-263AB
HGT1S12N60A4DS	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S12N60A4DS	ONSEMI	获取价格	600V，SMPS IGBT
HGT1S12N60A4DS	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S12N60A4DS_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE

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