Datasheet > HGT1S12N60A4DS

HGT1S12N60A4DS

更新时间： 2024-09-17 11:11:43

品牌	Logo	应用领域
安森美 - ONSEMI		电动机控制栅瞄准线双极性晶体管
页数	文件大小	规格书
12页	583K
描述
600V，SMPS IGBT

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中文翻译

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技术参数
数据手册

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HGT1S12N60A4DS 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	Factory Lead Time：	1 week
风险等级：	5.14	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	54 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	POWER CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	180 ns	标称接通时间 (ton)：	33 ns
Base Number Matches：	1

HGT1S12N60A4DS 数据手册

SMPS Series N-Channel

IGBT with Anti-Parallel

Hyperfast Diode

600 V

HGTG12N60A4D,

HGTP12N60A4D,

HGT1S12N60A4DS

www.onsemi.com

The

HGTG12N60A4D,

HGTP12N60A4D

and

HGT1S12N60A4DS are MOS gated high voltage switching devices

combining the best features of MOSFETs and bipolar transistors.

These devices have the high input impedance of a MOSFET and the

low on−state conduction loss of a bipolar transistor. The much lower

on−state voltage drop varies only moderately between 25°C and

150°C. The IGBT used is the development type TA49335. The diode

used in anti−parallel is the development type TA49371.

This IGBT is ideal for many high voltage switching applications

operating at high frequencies where low conduction losses are

essential. This device has been optimized for high frequency switch

mode power supplies.

COLLECTOR

(FLANGE)

TO−220−3LD

CASE 340AT

JEDEC ALTERNATE

VERSION

Formerly Developmental Type TA49337.

COLLECTOR

(FLANGE)

D PAK−3

Features

(TO−263, 3−LEAD)

CASE 418AJ

JEDEC STYLE

• >100 kHz Operation 390 V, 12 A

• 200 kHz Operation 390 V, 9A

• 600 V Switching SOA Capability

• Typical Fall Time 70 ns at T = 125°C

TO−247−3LD

SHORT LEAD

CASE 340CK

JEDEC STYLE

• Low Conduction Loss

• Temperature Compensating Saber™ Model

COLLECTOR

(FLANGE)

• Related Literature

♦ TB334 “Guidelines for Soldering Surface Mount Components to

PC Boards”

MARKING DIAGRAM

• These are Pb−Free Devices

$Y&Z&3&K

12N60A4D

$Y&Z&3&K

12N60A4D

$Y&Z&3&K

12N60A4D

= ON Semiconductor Logo

= Assembly Plant Code

= Numeric Date Code

= Lot Code

12N60A4D = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

Publication Order Number:

April, 2020 − Rev. 3

HGT1S12N60A4DS/D

12 3 4 5 6 7...12

中文翻译

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与HGT1S12N60A4DS相关器件

型号	品牌	获取价格	描述	数据表
HGT1S12N60A4DS_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
HGT1S12N60A4DS9A	INTERSIL	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 54A I(C) \| TO-263AB
HGT1S12N60A4DST	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S12N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGT1S12N60A4S9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBTs
HGT1S12N60B3DS	FAIRCHILD	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60B3S	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60B3S9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB

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