Datasheet > HGT1S12N60A4DST

HGT1S12N60A4DST

更新时间： 2024-11-05 20:09:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		栅瞄准线功率控制晶体管
页数	文件大小	规格书
12页	228K
描述
Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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技术参数
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HGT1S12N60A4DST 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	unknown
风险等级：	5.57	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	54 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：	95 ns	门极-发射极最大电压：	20 V
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	167 W
认证状态：	Not Qualified	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	180 ns
标称接通时间 (ton)：	33 ns	Base Number Matches：	1

HGT1S12N60A4DST 数据手册

HGTG12N60A4D, HGTP12N60A4D,

HGT1S12N60A4DS

Data Sheet

October 2001

File Number 4697.3

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A

• 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A

The HGTG12N60A4D, HGTP12N60A4D and

HGT1S12N60A4DS are MOS gated high voltage switching

devices combining the best features of MOSFETs and

bipolar transistors. These devices have the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49335. The diode

used in anti-parallel is the development type TA49371.

• Temperature Compensating SABER™ Model

www.fairchildsemi.com

• Related Literature

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB ALTERNATE VERSION

Formerly Developmental Type TA49337.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

HGTG12N60A4D

HGTP12N60A4D

HGT1S12N60A4DS

PACKAGE

BRAND

12N60A4D

TO-247

TO-220AB

TO-263AB

12N60A4D

JEDEC TO-263AB

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the TO-263AB variant in tape and reel, i.e.

HGT1S12N60A4DST.

COLLECTOR

(FLANGE)

Symbol

JEDEC STYLE TO-247

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. A1

12 3 4 5 6 7...12

中文翻译

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与HGT1S12N60A4DST相关器件

型号	品牌	获取价格	描述	数据表
HGT1S12N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGT1S12N60A4S9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBTs
HGT1S12N60B3DS	FAIRCHILD	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
HGT1S12N60B3DS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60B3S	INTERSIL	获取价格	27A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60B3S9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB
HGT1S12N60C3	HARRIS	获取价格	24A, 600V, UFS Series N-Channel IGBTs
HGT1S12N60C3D	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA
HGT1S12N60C3DRS9A	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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