HGTP12N60A4, HGTG12N60A4,
HGT1S12N60A4S9A
Data Sheet
August 2003
600V, SMPS Series N-Channel IGBTs
Features
The HGTP12N60A4, HGTG12N60A4 and
• >100kHz Operation at 390V, 12A
• 200kHz Operation at 390V, 9A
HGT1S12N60A4S9A are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C
J
o
o
• Low Conduction Loss
drop varies only moderately between 25 C and 150 C.
• Related Literature
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
Formerly Developmental Type TA49335.
Packaging
JEDEC TO-220AB ALTERNATE VERSION
Ordering Information
PART NUMBER
PACKAGE
BRAND
12N60A4
COLLECTOR
(FLANGE)
HGTP12N60A4
TO-220AB
HGTG12N60A4
TO-247
12N60A4
12N60A4
E
C
G
HGT1S12N60A4S9A
TO-263AB
NOTE: When ordering, use the entire part number.
JEDEC TO-263AB
Symbol
C
COLLECTOR
(FLANGE)
G
G
E
JEDEC STYLE TO-247
E
E
C
G
COLLECTOR
(BOTTOM SIDE METAL)
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2003 Fairchild Semiconductor Corporation
HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Rev. B2