Datasheet > HGT1S12N60B3DS9A

HGT1S12N60B3DS9A

更新时间： 2024-01-14 21:39:43

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
7页	206K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB

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HGT1S12N60B3DS9A 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.57
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS, HYPER FAST RECOVERY
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	27 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	280 ns	标称接通时间 (ton)：	22 ns
Base Number Matches：	1

HGT1S12N60B3DS9A 数据手册

HGTG12N60B3D, HGTP12N60B3D,

HGT1S12N60B3DS

Data Sheet

December 2001

27A, 600V, UFS Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diode

Features

• 27A, 600V, T = 25 C

This family of MOS gated high voltage switching devices

combine the best features of MOSFETs and bipolar

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at T = 150 C

transistors. These devices have the high input impedance of

a MOSFET and the low on-state conduction loss of a bipolar

transistor. The much lower on-state voltage drop varies only

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

moderately between 25 C and 150 C. The IGBT used is the

development type TA49171. The diode used in anti-parallel

with the IGBT is the development type TA49188.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

COLLECTOR

(FLANGE)

Formerly developmental type TA49173.

Ordering Information

PART NUMBER

HGTP12N60B3D

HGTG12N60B3D

HGT1S12N60B3DS

PACKAGE

BRAND

12N60B3D

TO-220AB

TO-247

12N60B3D

JEDEC TO-263AB

TO-263AB

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in tape and reel, e.g.

HGT1S12N60B3DS9A.

COLLECTOR

(FLANGE)

Symbol

JEDEC STYLE TO-247

COLLECTOR

(BOTTOM SIDE METAL)

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B

12 3 4 5 6 7

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与HGT1S12N60B3DS9A相关器件

型号	品牌	描述	获取价格	数据表
HGT1S12N60B3S	INTERSIL	27A, 600V, UFS Series N-Channel IGBTs	获取价格
HGT1S12N60B3S9A	ETC	TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 12A I(C) \| TO-263AB	获取价格
HGT1S12N60C3	HARRIS	24A, 600V, UFS Series N-Channel IGBTs	获取价格
HGT1S12N60C3D	RENESAS	TRANSISTOR,IGBT,N-CHAN+DIODE,600V V(BR)CES,24A I(C),TO-262AA	获取价格
HGT1S12N60C3DRS9A	RENESAS	Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-263AB	获取价格
HGT1S12N60C3DS	INTERSIL	24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes	获取价格

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