Datasheet > 晶体管 > IGBT> HGT1S14N37G3VLS

HGT1S14N37G3VLS

更新时间： 2024-02-25 04:18:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管瞄准线双极性晶体管栅汽车点火
页数	文件大小	规格书
6页	160K
描述
14A, 370V N-Channel, Logic Level, Voltage Clamping IGBTs

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技术参数
数据手册

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HGT1S14N37G3VLS 技术参数

生命周期：	Active	零件包装代码：	D2PAK
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.68
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	25 A
配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	COMMERCIAL
表面贴装：	YES	端子面层：	NOT SPECIFIED
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	AUTOMOTIVE IGNITION	晶体管元件材料：	SILICON
标称断开时间 (toff)：	10000 ns	标称接通时间 (ton)：	4000 ns
Base Number Matches：	1

HGT1S14N37G3VLS 数据手册

HGT1S14N37G3VLS, HGTP14N37G3VL

Data Sheet

December 2001

14A, 370V N-Channel, Logic Level, Voltage

Clamping IGBTs

Features

• Logic Level Gate Drive

• Internal Voltage Clamp

This N-Channel IGBT is a MOS gated, logic level device

which is intended to be used as an ignition coil driver in

automotive ignition circuits. Unique features include an

active voltage clamp between the collector and the gate

which provides Self Clamped Inductive Switching (SCIS)

capability in ignition circuits. Internal diodes provide ESD

protection for the logic level gate. Both a series resistor and

a shunt resister are provided in the gate circuit.

• ESD Gate Protection

• T = 175 C

• Internal Series and Shunt Gate Resistors

• Low Conduction Loss

• Ignition Energy Capable

Formerly Developmental Type TA49169.

Packaging

Ordering Information

JEDEC TO-263AB

PART NUMBER

HGT1S14N37G3VLS

HGTP14N37G3VL

PACKAGE

TO-263AB

TO-220AB

BRAND

14N37GVL

COLLECTOR

(FLANGE)

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB in tape and reel, i.e. HGT1S14N37G3VLS9A

Symbol

COLLECTOR

JEDEC TO-220AB

GATE

COLLECTOR

(FLANGE)

EMITTER

Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGT1S14N37G3VLS, HGTP14N37G3VL Rev. B

12 3 4 5 6

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与HGT1S14N37G3VLS相关器件

型号	品牌	描述	获取价格	数据表
HGT1S14N37G3VLS9A	FAIRCHILD	TRANSISTOR \| IGBT \| N-CHAN \| 380V V(BR)CES \| 18A I(C) \| TO-263AB	获取价格
HGT1S14N40F3VLS	FAIRCHILD	330mJ, 400V, N-Channel Ignition IGBT	获取价格
HGT1S14N40F3VLS9A	RENESAS	14A, N-CHANNEL IGBT, TO-263, TO-263, 3 PIN	获取价格
HGT1S14N41G3VLS	ETC	TRANSISTOR \| IGBT \| N-CHAN \| 445V V(BR)CES \| TO-220AB	获取价格
HGT1S14N41G3VLS9A	ETC	TRANSISTOR \| IGBT \| N-CHAN \| 395V V(BR)CES \| 18A I(C) \| TO-263AB	获取价格
HGT1S14N41G3VLST	FAIRCHILD	Insulated Gate Bipolar Transistor, 25A I(C), 445V V(BR)CES, N-Channel, TO-263AB	获取价格

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