Datasheet > HGT1S1N120CNDS9A

HGT1S1N120CNDS9A

更新时间： 2024-02-22 10:06:48

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
8页	109K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 6.2A I(C) \| TO-263AB

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技术参数
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HGT1S1N120CNDS9A 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	not_compliant	风险等级：	5.13
Is Samacsys：	N	其他特性：	LOW CONDUCTION LOSS, HYPER FAST RECOVERY
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	6.2 A
集电极-发射极最大电压：	1200 V	配置：	SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	75 ns	标称接通时间 (ton)：	13 ns
Base Number Matches：	1

HGT1S1N120CNDS9A 数据手册

HGTP1N120CND, HGT1S1N120CNDS

Data Sheet

December 2001

6.2A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Features

• 6.2A, 1200V, T = 25 C

The HGTP1N120CND and the HGT1S1N120CNDS are

Non-Punch Through (NPT) IGBT designs. They are new

members of the MOS gated high voltage switching IGBT

family. IGBTs combine the best features of MOSFETs and

bipolar transistors.This device has the high input impedance

of a MOSFET and the low on-state conduction loss of a

bipolar transistor.

• 1200V Switching SOA Capability

• Typical E

OFF

. . . . . . . . . . . . . . . . . . 200µJ at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Temperature Compensating SABER™ Model

Thermal Impedance SPICE Model

www.fairchildsemi.com/

The IGBT is development type number TA49317. The diode

used in anti-parallel with the IGBT is the RHRD4120

(TA49056).

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Packaging

JEDEC TO-220AB

Formerly developmental type TA49315.

COLLECTOR

(FLANGE)

Ordering Information

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

1N120CND

HGTP1N120CND

HGT1S1N120CNDS

JEDEC TO-263AB

COLLECTOR

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB in tape and reel, e.g.

HGT1S1N120CNDS9A.

(FLANGE)

Symbol

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTP1N120CND, HGT1S1N120CNDS Rev. B

12 3 4 5 6 7 8

中文翻译

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与HGT1S1N120CNDS9A相关器件

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