Datasheet > HGT1S2N120CNDS9A

HGT1S2N120CNDS9A

更新时间： 2024-02-07 11:51:02

品牌	Logo	应用领域
瑞萨 - RENESAS		电动机控制栅瞄准线双极性晶体管
页数	文件大小	规格书
7页	92K
描述
13A, 1200V, N-CHANNEL IGBT, TO-263AB

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HGT1S2N120CNDS9A 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	not_compliant	风险等级：	5.12
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	13 A	集电极-发射极最大电压：	1200 V
配置：	SINGLE	最大降落时间（tf）：	420 ns
门极发射器阈值电压最大值：	6.7 V	门极-发射极最大电压：	20 V
JEDEC-95代码：	TO-263AB	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	104 W	认证状态：	Not Qualified
最大上升时间（tr）：	15 ns	子类别：	Insulated Gate BIP Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	585 ns	标称接通时间 (ton)：	32 ns
Base Number Matches：	1

HGT1S2N120CNDS9A 数据手册

HGTP2N120CND, HGT1S2N120CNDS

Data Sheet

January 2000

File Number 4681.2

13A, 1200V, NPT Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diodes

Features

• 13A, 1200V, T = 25 C

The HGTP2N120CND and HGT1S2N120CNDS are

Non-Punch Through (NPT) IGBT designs. They are new

members of the MOS gated high voltage switching IGBT

family. IGBTs combine the best features of MOSFETs and

bipolar transistors. This device has the high input impedance

of a MOSFET and the low on-state conduction loss of a

bipolar transistor. The IGBT used is the development type

TA49313. The Diode used is the development type TA49056

(Part number RHRD4120).

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 360ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.intersil.com

• Related Literature

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC TO-220AB (ALTERNATE VERSION)

Formerly Developmental Type TA49311.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

PACKAGE

TO-220AB

TO-263AB

BRAND

2N120CND

HGTP2N120CND

HGT1S2N120CNDS

NOTE: When ordering, use the entire part number. Add the sufﬁx 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S2N120CNDS9A.

JEDEC TO-263AB

Symbol

COLLECTOR

(FLANGE)

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

SABER™ is a trademark of Analogy, Inc.

12 3 4 5 6 7

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与HGT1S2N120CNDS9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S2N120CNS	INTERSIL	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGT1S2N120CNS	FAIRCHILD	获取价格	13A, 1200V, NPT Series N-Channel IGBT
HGT1S2N120CNS9A	RENESAS	获取价格	13A, 1200V, N-CHANNEL IGBT, TO-263AB
HGT1S3N60A4DS	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS9A	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S3N60A4DS9A_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
HGT1S3N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT
HGT1S3N60A4S	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S3N60A4S9A	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB

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