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HGT1S3N60A4S

更新时间： 2024-02-13 18:48:49
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
10页 159K
描述
600V, SMPS Series N-Channel IGBT

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中文翻译

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HGT1S3N60A4S 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.11
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：17 A
集电极-发射极最大电压：600 V配置：SINGLE
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：180 ns标称接通时间 (ton)：17.5 ns
Base Number Matches：1

HGT1S3N60A4S 数据手册

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HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4  
Data Sheet  
January 2000  
File Number 4825  
600V, SMPS Series N-Channel IGBT  
Features  
The HGTD3N60A4S, HGT1S3N60A4S and the  
• >100kHz Operation at 390V, 3A  
• 200kHz Operation at 390V, 2.5A  
• 600V Switching SOA Capability  
HGTP3N60A4 are MOS gated high voltage switching  
devices combining the best features of MOSFETs and  
bipolar transistors. These devices have the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
o
• Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C  
J
o
o
• 12mJ E Capability  
AS  
drop varies only moderately between 25 C and 150 C.  
• Low Conduction Loss  
This IGBT is ideal for many high voltage switching  
applications operating at high frequencies where low  
conduction losses are essential. This device has been  
optimized for high frequency switch mode power  
supplies.  
• Temperature Compensating SABER Model  
www.intersil.com  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly Developmental Type TA49327.  
Packaging  
Ordering Information  
JEDEC TO-252AA  
PART NUMBER  
HGTD3N60A4S  
HGT1S3N60A4S  
HGTP3N60A4  
PACKAGE  
BRAND  
3N60A4  
TO-252AA  
COLLECTOR  
(FLANGE)  
TO-263AB  
TO-220AB  
3N60A4  
3N60A4  
G
E
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-252AA or the TO-263AB in tape and reel, i.e.  
HGT1S3N60A4S9A  
JEDEC TO-263AB  
Symbol  
COLLECTOR  
(FLANGE)  
C
G
E
G
JEDEC TO-220AB  
E
C
E
G
COLLECTOR  
(FLANGE)  
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
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中文翻译

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HGT1S3N60C3DS INTERSIL

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 		6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
HGT1S3N60C3DS9A ETC

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 		TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 3A I(C) | TO-263AB

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