Datasheet > HGT1S5N120BNDS9A

HGT1S5N120BNDS9A

更新时间： 2024-02-05 11:07:06

品牌	Logo	应用领域
其他 - ETC		晶体晶体管电动机控制瞄准线双极性晶体管栅
页数	文件大小	规格书
8页	156K
描述
TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 10A I(C) \| TO-263AB

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中文翻译

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技术参数
数据手册

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HGT1S5N120BNDS9A 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.6
其他特性：	LOW CONDUCTION LOSS, HYPER FAST RECOVERY	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	21 A	集电极-发射极最大电压：	1200 V
配置：	SINGLE WITH BUILT-IN DIODE	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	晶体管应用：	MOTOR CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	182 ns
标称接通时间 (ton)：	20 ns	Base Number Matches：	1

HGT1S5N120BNDS9A 数据手册

HGTG5N120BND, HGTP5N120BND,

HGT1S5N120BNDS

Data Sheet

December 2001

21A, 1200V, NPT Series N-Channel IGBTs

with Anti-Parallel Hyperfast Diodes

Features

• 21A, 1200V, T = 25 C

The HGTG5N120BND, HGTP5N120BND, and

• 1200V Switching SOA Capability

HGT1S5N120BNDS are Non-Punch Through (NPT) IGBT

designs. They are new members of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor. The IGBT used

is the development type TA49308. The Diode used is the

development type TA49058 (Part number RHRD6120).

• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Temperature Compensating SABER™ Model

www.fairchildsemi.com

• Related Literature

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Packaging

JEDEC STYLE TO-247

Formerly Developmental Type TA49306.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

HGTG5N120BND

HGTP5N120BND

HGT1S5N120BNDS

PACKAGE

BRAND

5N120BND

TO-247

TO-220AB

TO-263AB

5N120BND

NOTE: When ordering, use the entire part number. Add the suffix 9A

to obtain the TO-263AB variant in Tape and Reel, i.e.,

HGT1S5N120BNS9A.

JEDEC TO-220AB (ALTERNATE VERSION)

Symbol

COLLECTOR

(FLANGE)

JEDEC TO-263AB

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Rev. B

12 3 4 5 6 7 8

中文翻译

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与HGT1S5N120BNDS9A相关器件

型号	品牌	获取价格	描述	数据表
HGT1S5N120BNS	INTERSIL	获取价格	21A, 1200V, NPT Series N-Channel IGBTs
HGT1S5N120BNS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 10A I(C) \| TO-263AB
HGT1S5N120CNDS	INTERSIL	获取价格	25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S5N120CNDS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 25A I(C) \| TO-263AB
HGT1S5N120CNS	INTERSIL	获取价格	25A, 1200V, NPT Series N-Channel IGBT
HGT1S5N120CNS9A	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.2KV V(BR)CES \| 25A I(C) \| TO-263AB
HGT1S7N60A4DS	FAIRCHILD	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S7N60A4DS	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGT1S7N60A4DS9A	ROCHESTER	获取价格	34A, 600V, N-CHANNEL IGBT, TO-263AB, TO-263AB, 3 PIN
HGT1S7N60A4S	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT

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