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HGT1S7N60B3DS9A PDF预览

HGT1S7N60B3DS9A

更新时间： 2024-01-25 09:54:07
品牌 Logo 应用领域
其他 - ETC 晶体晶体管功率控制瞄准线双极性晶体管栅
页数 文件大小 规格书
8页 154K
描述
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB

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HGT1S7N60B3DS9A 技术参数

生命周期：Transferred零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：unknown风险等级：5.02
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
外壳连接：COLLECTOR最大集电极电流 (IC)：14 A
集电极-发射极最大电压：600 V配置：SINGLE WITH BUILT-IN DIODE
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子形式：GULL WING端子位置：SINGLE
晶体管应用：MOTOR CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：350 ns标称接通时间 (ton)：46 ns
Base Number Matches：1

HGT1S7N60B3DS9A 数据手册

 浏览型号HGT1S7N60B3DS9A的Datasheet PDF文件第2页浏览型号HGT1S7N60B3DS9A的Datasheet PDF文件第3页浏览型号HGT1S7N60B3DS9A的Datasheet PDF文件第4页浏览型号HGT1S7N60B3DS9A的Datasheet PDF文件第5页浏览型号HGT1S7N60B3DS9A的Datasheet PDF文件第6页浏览型号HGT1S7N60B3DS9A的Datasheet PDF文件第7页 
HGTP7N60B3D, HGT1S7N60B3DS  
Data Sheet  
December 2001  
14A, 600V, UFS Series N-Channel IGBTs  
with Anti-Parallel Hyperfast Diode  
Features  
o
• 14A, 600V, T = 25 C  
C
The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated  
high voltage switching devices combining the best features  
of MOSFETs and bipolar transistors. These devices have the  
high input impedance of a MOSFET and the low on-state  
conduction loss of a bipolar transistor. The much lower  
• 600V Switching SOA Capability  
o
• Typical Fall Time. . . . . . . . . . . . . . . . 120ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
• Hyperfast Anti-Parallel Diode  
o
on-state voltage drop varies only moderately between 25 C  
o
and 150 C at rated current. The IGBT is developmental type  
TA49190. The diode used in anti-parallel with the IGBT is the  
RHRD660 (TA49057).  
Packaging  
JEDEC TO-220AB (ALTERNATE VERSION)  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
COLLECTOR  
(FLANGE)  
E
C
G
Formerly Developmental Type TA49191.  
Ordering Information  
PART NUMBER  
PACKAGE  
TO-220AB ALT  
TO-263AB  
BRAND  
G7N60B3D  
G7N60B3D  
JEDEC TO-263AB  
COLLECTOR  
HGTP7N60B3D  
HGT1S7N60B3DS  
G
NOTE: When ordering, use the entire part number. Add the suffix 9A  
to obtain the TO-263AB variant in tape and reel, i.e.,  
HGT1S7N60B3DS9A.  
(FLANGE)  
E
Symbol  
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTP7N60B3D, HGT1S7N60B3DS Rev. B  
12345678

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