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HGT1Y40N60B3D PDF预览

HGT1Y40N60B3D

更新时间: 2024-01-09 13:37:20
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管双极性晶体管
页数 文件大小 规格书
9页 128K
描述
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

HGT1Y40N60B3D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-264AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.92外壳连接:COLLECTOR
最大集电极电流 (IC):70 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):175 ns
门极发射器阈值电压最大值:6 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):290 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):385 ns
标称接通时间 (ton):82 nsBase Number Matches:1

HGT1Y40N60B3D 数据手册

 浏览型号HGT1Y40N60B3D的Datasheet PDF文件第2页浏览型号HGT1Y40N60B3D的Datasheet PDF文件第3页浏览型号HGT1Y40N60B3D的Datasheet PDF文件第4页浏览型号HGT1Y40N60B3D的Datasheet PDF文件第5页浏览型号HGT1Y40N60B3D的Datasheet PDF文件第6页浏览型号HGT1Y40N60B3D的Datasheet PDF文件第7页 
HGT1Y40N60B3D  
Data Sheet  
December 2001  
70A, 600V, UFS Series N-Channel IGBT  
with Anti-Parallel Hyperfast Diodes  
Symbol  
C
The HGT1Y40N60B3D is a MOS gated high voltage  
switching device combining the best features of MOSFETs  
and bipolar transistors. The device has the high input  
impedance of a MOSFET and the low on-state conduction  
loss of a bipolar transistor. The much lower on-state voltage  
drop varies only moderately between 25 C and 150 C. The  
IGBT used is the development type TA49052. The diode  
used in anti-parallel with the IGBT is the development type  
TA49063.  
G
o
o
E
Features  
The IGBT is ideal for many high voltage switching  
applications operating at moderate frequencies where low  
conduction losses are essential, such as: AC and DC motor  
controls, power supplies and drivers for solenoids, relays  
and contactors.  
o
• 70A, 600V, T = 25 C  
C
• 600V Switching SOA Capability  
o
• Typical Fall Time . . . . . . . . . . . . . . . 100ns at T = 150 C  
J
• Short Circuit Rating  
• Low Conduction Loss  
Formerly Developmental Type TA49365.  
Ordering Information  
Packaging  
PART NUMBER  
PACKAGE  
BRAND  
G40N60B3D  
JEDEC STYLE TO-264  
HGT1Y40N60B3D  
TO-264  
E
C
G
NOTE: When ordering, use the entire part number.  
COLLECTOR  
(FLANGE)  
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS  
4,364,073  
4,598,461  
4,682,195  
4,803,533  
4,888,627  
4,417,385  
4,605,948  
4,684,413  
4,809,045  
4,890,143  
4,430,792  
4,620,211  
4,694,313  
4,809,047  
4,901,127  
4,443,931  
4,631,564  
4,717,679  
4,810,665  
4,904,609  
4,466,176  
4,639,754  
4,743,952  
4,823,176  
4,933,740  
4,516,143  
4,639,762  
4,783,690  
4,837,606  
4,963,951  
4,532,534  
4,641,162  
4,794,432  
4,860,080  
4,969,027  
4,587,713  
4,644,637  
4,801,986  
4,883,767  
©2001 Fairchild Semiconductor Corporation  
HGTG40N60B3 Rev. B  

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