是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.76 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 12 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | NOT SPECIFIED |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HGTD10N40F1S | INTERSIL |
获取价格 |
10A, 400V and 500V N-Channel IGBTs | |
HGTD10N40F1S9A | RENESAS |
获取价格 |
Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA | |
HGTD10N50F1 | INTERSIL |
获取价格 |
10A, 400V and 500V N-Channel IGBTs | |
HGTD10N50F1S | INTERSIL |
获取价格 |
10A, 400V and 500V N-Channel IGBTs | |
HGTD10N50F1S9A | RENESAS |
获取价格 |
12A, 500V, N-CHANNEL IGBT, TO-252AA | |
HGTD14N41G4VLS | RENESAS |
获取价格 |
24A, 430V, N-CHANNEL IGBT, TO-252AA | |
HGTD14N41G4VLS9A | RENESAS |
获取价格 |
24A, 430V, N-CHANNEL IGBT, TO-252AA | |
HGTD1N120BNS | FAIRCHILD |
获取价格 |
5.3A, 1200V, NPT Series N-Channel IGBT | |
HGTD1N120BNS | INTERSIL |
获取价格 |
5.3A, 1200V, NPT Series N-Channel IGBT | |
HGTD1N120BNS9A | FAIRCHILD |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 2.7A I(C) | TO-252AA |