Datasheet > HGT5A40N60A4D

HGT5A40N60A4D

更新时间： 2024-01-22 18:15:38

品牌	Logo	应用领域
英特矽尔 - INTERSIL		二极管开关双极性晶体管
页数	文件大小	规格书
9页	103K
描述
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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HGT5A40N60A4D 技术参数

生命周期：	Transferred	零件包装代码：	TO-247
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.25
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	75 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	240 ns	标称接通时间 (ton)：	47 ns
Base Number Matches：	1

HGT5A40N60A4D 数据手册

HGT5A40N60A4D

Data Sheet

February 2000

File Number 4783.1

600V, SMPS Series N-Channel IGBT with

Anti-Parallel Hyperfast Diode

Features

• 100kHz Operation at 390V, 40A

• 200kHz Operation at 390V, 20A

• 600V Switching SOA Capability

The HGT5A40N60A4D is a MOS gated high voltage

switching device combining the best features of a MOSFET

and a bipolar transistor. This device has the high input

impedance of a MOSFET and the low on-state conduction

loss of a bipolar transistor. The much lower on-state voltage

• Typical Fall Time. . . . . . . . . . . . . . . . . . 55ns at T = 125

• Low Conduction Loss

drop varies only moderately between 25 C and 150 C. The

IGBT used is the development type TA49347. The diode

used in anti-parallel is the development type 49374.

Packaging

JEDEC STYLE STRETCH TO-247

This IGBT is ideal for many high voltage switching

applications operating at high frequencies where low

conduction losses are essential. This device has been

optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49349.

Ordering Information

COLLECTOR

(FLANGE)

PART NUMBER

PACKAGE

BRAND

40N60A4D

HGT5A40N60A4D

TO-247-ST

NOTE: When ordering, use the entire part number.

Symbol

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

2-1

12 3 4 5 6 7...9

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与HGT5A40N60A4D相关器件

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HGTA32N60E2	INTERSIL	获取价格	32A, 600V N-Channel IGBT
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HGTB12N60D1C	ROCHESTER	获取价格	18A, 600V, N-CHANNEL IGBT, TS-001AA
HGTD10N40F1	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs
HGTD10N40F1S	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs
HGTD10N40F1S9A	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
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HGTD10N50F1S	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs
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