Datasheet > HGT4E30N60B3DS

HGT4E30N60B3DS

更新时间： 2024-01-17 13:18:57

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		双极性晶体管
页数	文件大小	规格书
8页	210K
描述
60A, 600V, UFS Series N-Channel IGBT

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中文翻译

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技术参数
数据手册

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HGT4E30N60B3DS 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.84
其他特性：	LOW CONDUCTION LOSS	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	60 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	JEDEC-95代码：	TO-268AA
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	365 ns	标称接通时间 (ton)：	56 ns
Base Number Matches：	1

HGT4E30N60B3DS 数据手册

HGTG30N60B3D, HGT4E30N60B3DS

Data Sheet

December 2001

60A, 600V, UFS Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

Packaging

JEDEC STYLE TO-247

The HGTG30N60B3D, and HGT4E30N60B3DS are MOS

gated high voltage switching devices combining the best

features of MOSFETs and bipolar transistors. These devices

have the high input impedance of a MOSFET and the low

on-state conduction loss of a bipolar transistor. The much

lower on-state voltage drop varies only moderately between

25 C and 150 C. The IGBT used is the development type

TA49170. The diode used in anti-parallel with the IGBT is the

development type TA49053.

TO-268AA

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49172.

Ordering Information

PART NUMBER

PACKAGE

TO-247

TO-268AA

BRAND

G30N60B3D

HGTG30N60B3D

Symbol

HGT4E30N60B3DS

NOTE: When ordering, use the entire part number.

Features

• 60A, 600V, T = 25 C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . . 90ns at T = 150 C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073

4,598,461

4,682,195

4,803,533

4,888,627

4,417,385

4,605,948

4,684,413

4,809,045

4,890,143

4,430,792

4,620,211

4,694,313

4,809,047

4,901,127

4,443,931

4,631,564

4,717,679

4,810,665

4,904,609

4,466,176

4,639,754

4,743,952

4,823,176

4,933,740

4,516,143

4,639,762

4,783,690

4,837,606

4,963,951

4,532,534

4,641,162

4,794,432

4,860,080

4,969,027

4,587,713

4,644,637

4,801,986

4,883,767

HGTG30N60B3D, HGT4E30N60B3DS Rev. B1

12 3 4 5 6 7 8

中文翻译

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与HGT4E30N60B3DS相关器件

型号	品牌	获取价格	描述	数据表
HGT5A27N120BN	FAIRCHILD	获取价格	72A, 1200V, NPT Series N-Channel IGBT
HGT5A30N120CN	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, TO-247ST, 3 PIN
HGT5A40N60A4D	INTERSIL	获取价格	600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTA32N60E2	INTERSIL	获取价格	32A, 600V N-Channel IGBT
HGTB12N60D1C	RENESAS	获取价格	TRANSISTOR,IGBT,N-CHAN,CURRENT SENSE,600V V(BR)CES,18A I(C),SIP
HGTB12N60D1C	ROCHESTER	获取价格	18A, 600V, N-CHANNEL IGBT, TS-001AA
HGTD10N40F1	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs
HGTD10N40F1S	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs
HGTD10N40F1S9A	RENESAS	获取价格	Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
HGTD10N50F1	INTERSIL	获取价格	10A, 400V and 500V N-Channel IGBTs

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